| PART |
Description |
Maker |
| DL-3147-165 |
Laser Diode, 5mW Power, 650nm Wave Length, 25mA Current
|
Sanyo Semiconductor
|
| OL5201N-25 OL5201N_25_5204N_25 OL5204N-25 |
PT 3C 3#20 SKT RECP
1.55 m High-Power Laser-Diode DIP Module
From old datasheet system
1.55 um High-Power Laser-Diode DIP Module
1.55 レm High-Power Laser-Diode DIP Module
1.55 μm High-Power Laser-Diode DIP Module
|
OKI electronic components
OKI SEMICONDUCTOR CO., LTD.
OKI[OKI electronic componets]
|
| DL-7140-201 |
Infrared Laser Diode High Power Laser Diode
|
SANYO
|
| NX8349YK |
LASER DIODE 1 271 to 1 331 nm AlGaInAs MQW-DFB LASER DIODE FOR 40 G BASE-LR4 APPLICATION
|
California Eastern Labs
|
| NX7363JB-BC |
LASER DIODE InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 310 nm OTDR APPLICATION
|
Renesas Electronics Corporation
|
| NX7335AN-AA NX7335BN-AA |
LASER DIODE 1 310 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE WITH MONITOR PD FOR OTDR APPLICATION
|
Renesas Electronics Corporation
|
| NX7337BF-AA |
LASER DIODE 1 310 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION
|
Renesas Electronics Corporation
|
| NX6314EH |
LASER DIODE 1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH P2P AND 3 Gb/s BTS
|
Renesas Electronics Corporation
|
| NX6240GP |
LASER DIODE 1 270 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s E-PON ONU APPLICATION
|
Renesas Electronics Corporation
|
| NX6514EH |
LASER DIODE 1 550 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH P2P AND OC-48 IR-2
|
Renesas Electronics Corporation
|
| 1A440 |
VCSEL(Vertical Cavity Surface-Emitting) Laser Diode(用于光纤通道，吉位以太网，ATM的垂直空腔表面辐射激光二极管) VCSEL（垂直腔表面发射）激光二极管（用于光纤通道，吉位以太网，自动取款机的垂直空腔表面辐射激光二极管
VCSEL Laser Diode(Datacom General Purpose)
VCSEL Laser Diode(Datacom/ General Purpose)
VCSEL Laser Diode(Datacom, General Purpose) VCSEL激光二极管（数据通信，通用
|
Mitel Networks Corporat...
Mitel Networks, Corp.
MITEL[Mitel Networks Corporation]
Mitel Semiconductor
|
