| PART |
Description |
Maker |
| NAND04G-B |
1 Gbit, 2 Gbit, 4 Gbit, 8 Gbit 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 1千兆千兆位，4千兆位，8千兆112 Byte/1056字的页面.8V/3V，NAND闪存
|
STMicroelectronics N.V.
|
| NAND01G-B |
1 Gbit, 2 Gbit, 4 Gbit, 8 Gbit 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
|
STMicroelectronics
|
| NAND02GW3B2BN1E NAND02GW3B2BN1F NAND02GW3B2BN6E NA |
1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
|
Numonyx B.V
|
| NAND02GW4B2DN6E NAND02GW4B2DN6F NAND02G-B2D NAND02 |
2-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, NAND flash memories
|
Numonyx B.V
|
| NAND08GW3C2BZL1E NAND16GW3C2BZL1E NAND08GW3C2BZL1F |
8 or 16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory
|
Numonyx B.V
|
| PC28F00AP30TFA PC28F00BP30EFA |
Numonyx? Axcell P30-65nm Flash Memory 512-Mbit, 1-Gbit , 2-Gbit
|
Micron Technology
|
| V23838-M305-M56 |
Transceivers by Form-factor MSA - SFP Multimode 850 nm; 2.125/ 1.062 Gbit/s FC; 1.25 Gbit/s GBE; LC Connector
|
Infineon
|
| V23818-K15-L46 V23818-K15-L16 |
Small Form Factor Single Mode 1300 nm 1.0625 Gbit/s Fibre Channel 1.25 Gigabit Ethernet Transceiver 2x5/2x10 Pinning with LC Connector 纤巧单模1300纳米1.0625 Gbit / s的光纤通道1.25千兆以太网收发器2x5/2x10的LC连接器钢
|
Infineon Technologies AG
|
| PM5390 2000181 |
10 Gbit/s Physical Layer Device for POS / ATM and Ethernet
10 Gbit/s Physical Layer Device for POS, ATM and Ethernet
From old datasheet system
|
PMC-Sierra, Inc
|
| V23832-T2531-M101 V23832-R111-M101 V23832-R121-M10 |
PAROLI 2 Tx AC, 1.25 Gbit/s
|
INFINEON[Infineon Technologies AG]
|
| FOA1121A1 FOA1122A1 |
1.25 Gbit/s Transimpedance Amplifier
|
Infineon
|
| HYB18TC1G160AF HYB18TC1G160BF-3.7 HYB18TC1G160BF-3 |
1-Gbit DDR2 SDRAM
|
Qimonda AG
|
