| PART |
Description |
Maker |
| ZABG4002 ZABG4002JA16TC |
LOW POWER 4 STAGE FET LNA BIAS CONTROLLER
|
Diodes Incorporated
|
| AN11006 |
Single stage 2.3_2.7GHz LNA with BFU730F
|
NXP Semiconductors
|
| MGF0805A11 |
High-power GaAs FET (small signal gain stage)
|
Mitsubishi Electric Semiconductor
|
| MGF0953P11 |
High-power GaAs FET (small signal gain stage)
|
Mitsubishi Electric Semiconductor
|
| MGF0912A MGF0912A11 |
High-power GaAs FET (small signal gain stage)
|
Mitsubishi Electric Semiconductor
|
| MGF0906B MGF0906B11 |
High-power GaAs FET (small signal gain stage)
|
Mitsubishi Electric Semiconductor
|
| SA611DK SA611 SA611_3 |
1 GHz low voltage LNA and mixer
From old datasheet system
1GHz low voltage LNA and mixer
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| TQ3M31 |
832-894 MHz & 1930-1990 MHz Dual Band LNA
From old datasheet system
Dual Band LNA: 2.8V, Cellular and PCS Band CDMA/AMPS LNA IC
|
TRIQUINT[TriQuint Semiconductor]
TriQuint Semiconductor,Inc.
|
| STEVAL-IEM003V1 |
Low voltage 3-phase power stage for electric traction with MC connector
|
STMicroelectronics
|
| 2SK2414 2SK2414-Z 2SK2414-Z-T1 2SK2414-Z-E1 2SK241 |
Switching N-channel power MOS FET industrial use N沟道 开关功率场效应晶体工业
Low withstand voltage Nch MOS FET
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
