| PART |
Description |
Maker |
| K4H510838C-UCB3 K4H510438C-UCB0 K4H510438C-ULA2 K4 |
512MB C-DIE DDR SDRAM SPECIFICATION
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| HYB25D512160BE-5 HYB25D512800BC-5 HYB25D512800BE-5 |
DDR SDRAM Components - 512Mb (32Mx16) DDR400 (3-3-3)
DDR SDRAM Components - 512Mb FBGA (64Mx8) DDR400 (3-3-3)
DDR SDRAM Components - 512Mb (64Mx8) DDR400 (3-3-3)
DDR SDRAM Components - 512Mb FBGA (64Mx8) DDR333 (2.5-3-3)
DDR SDRAM Components - 512Mb (32Mx16) DDR333 (2.5-3-3)
DDR SDRAM Components - 512Mb FBGA (128Mx4) DDR333 (2.5-3-3)
DDR SDRAM Components - 512Mb (64Mx8) DDR333 (2.5-3-3)
DDR SDRAM Components - 512Mb (128Mx4) DDR266A (2-3-3)
|
Infineon
|
| HY5DU12422CLTP HY5DU12422CLTP-X HY5DU121622CTP-X H |
CAP.00047UF 16V PPS FILM 0603 2%
512Mb DDR SDRAM 产品512Mb DDR SDRAM
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| M470L6423CK0 |
512MB DDR SDRAM MODULE (64Mx64 based on DDP 64Mx 8 DDR SDRAM) 200pin SODIMM 64bit Non-ECC/Parity
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| M368L6523DUS-LB3 M381L6523DUM-LCC M381L6523DUM-LB3 |
DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb D-die with 64/72-bit Non ECC/ECC 66 TSOP-II with Pb-Free (RoHS compliant) DDR SDRAM的缓冲模84pin缓冲模块的发展为本的512Mb芯片4/72-bit非ECC /有铅ECC6 TSOP-II免费（符合RoHS
|
http://
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| HYS72D128021GR-7-B HYS72D64020GR-8-B HYS72D128020G |
DDR SDRAM Modules - 512MB (64Mx72) PC2100 1-bank
DDR SDRAM Modules - 256MB (32Mx72) PC1600 1-bank
DDR SDRAM Modules - 512MB (64Mx72) PC1600 1-bank
DDR SDRAM Modules - 1GB (128Mx72) PC1600 2-bank
DDR SDRAM Modules - 256MB (32Mx72) PC2100 1-bank
DDR SDRAM Modules - 1GB (128Mx72) PC2100 2-bank
2.5 V 184-pin Registered DDR-I SDRAM Modules
|
INFINEON[Infineon Technologies AG]
|
| HYS72D128521GR-7-B HYS72D64500GR-8-B HYS72D128520G |
DDR SDRAM Modules - 512MB (64Mx72) PC2100 1-bank
DDR SDRAM Modules - 1GB (128Mx72) PC2100 1-bank
DDR SDRAM Modules - 256MB (32Mx72) PC2100 1-bank
256 MB 32M x 72 PC2100 Registered DIM...
DDR SDRAM Modules - 1GB (128Mx72) PC2100 2-2-2 2-bank
Registered DDR SDRAM-Modules
Low Profile Registered DDR-I SDRAM-Modules
|
INFINEON[Infineon Technologies AG]
|
| W3EG6462S403D3 |
512MB - 2x32Mx64 DDR SDRAM UNBUFFERED 512MB 2x32Mx64 DDR SDRAM内存缓冲
|
NanoAmp Solutions, Inc.
|
| K4H510838B-NC/LA2 K4H510838B-NC/LB0 K4H510838B-NC/ |
512Mb B-die DDR SDRAM Specification 54 sTSOP-II (400mil x 441mil) 512MB的乙芯片DDR SDRAM内存规格54 sTSOP -Ⅱ（400mil x 441mil
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K4S510832B-TC75 K4S510832B-TCL75 K4S510432B-TC K4S |
512Mb B-die SDRAM Specification
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K4T51163QC-ZCCC K4T51163QC-ZCD5 K4T51163QC-ZCD6 K4 |
512Mb C-die DDR2 SDRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
