| PART |
Description |
Maker |
| 3VD186600YL |
HIGH VOLTAGE MOSFET CHIPS
|
Silan Microelectronics Joint-stock
|
| 1206GA150JAT1A 1808AA105JA11A 1808GC223JA11A 1808H |
CAP 15PF 2000V 5% NP0(C0G) SMD-1206 TR-7 PLATED-NI/SN CAPACITOR, CERAMIC, MULTILAYER, 2000 V, C0G, 0.000015 uF, SURFACE MOUNT, 1206
High Voltage MLC Chips For 600V to 5000V Application
High Voltage MLC Chips For 600V to 5000V Application
|
AVX, Corp.
AVX Corporation
|
| MC08ED150J-F MC08CA020D-F MC08CA050D-F MC08CA060D- |
Multilayer RF Capacitors High-Frequency, High-Power, High-Voltage Chips with Nonmagnetic Option
|
Cornell Dubilier Electronics, Inc.
http://
Cornell Dubilier Electronic...
Cornell Dubilier Electr...
|
| CYT3000A |
linear constant current high voltage high power factor LED driver chips
|
EgoLL
|
| LD20 LD40 LD10 LD13 LD12 LD06 LD08 |
High Voltage MLC Chips Tin/Lead Termination “B For 600V to 5000V Applications
High Voltage MLC Chips Tin/Lead Termination “B?For 600V to 5000V Applications
|
AVX Corporation
|
| 3VD045060JL |
Nchannel MOSFET CHIPS
|
Silan Microelectronics Joint-stock
|
| HIP4081 HIP4081IB |
80V/2.5A Peak/ High Frequency Full Bridge FET Driver
System Basic Chips (SBC); Package: PG-DSO-28; Transceiver: Fault-tollerant CAN ISO 11898 - 3; Voltage Regulator Output: 120 mA; Watchdog: Window
|
Intersil Corporation
|
| 3VD037060NEJL |
N-CH MOSFET CHIPS WITH ESD PROTECTED STRUCTURE
|
Silan Microelectronics Joint-stock
|
| 3VD060060NEJL |
NCH MOSFET CHIPS WITH ESD PROTECTED STRUCTURE
|
Silan Microelectronics Joint-stock
|
| SSB-COB13340SYW-B |
SINGLE COLOR DISPLAY CLUSTER, SUPER YELLOW, 133 mm
133mm x 40mm V.A. SUPER YELLOW LED BACKLIGHT CHIPS ON BOARD, 132 CHIPS, 4.2V 660mA
133mm x 40mm V.A. SUPER YELLOW LED BACKLIGHT, CHIPS ON BOARD, 132 CHIPS, 4.2V 660mA
|
ETC
LUMEX INC.
List of Unclassifed Manufacturers
|
| IR2308 IR2308S |
High Voltage and High Speed power MOSFET and IGBT Half Bridge Driver in a 8-pin DIP package
High Voltage and High Speed power MOSFET and IGBT Half Bridge Driver in a 8-lead SOIC package
|
International Rectifier
|
| BF1012 Q62702-F1487 Q62702-S535 Q62702-C1659 |
NPN Silicon AF and Switching Transistor (High breakdown voltage Low collector-emitter saturation voltage) NPN硅自动对焦和开关晶体管（高击穿电压低集电极发射极饱和电压）
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
