| PART |
Description |
Maker |
| VSMY2853G VSMY2853RG |
High Speed Infrared Emitting Diodes, 850 nm, Surface Emitter Technology
Miniature light barrier
|
Vishay Siliconix
|
| TLN217 |
Infrared Light-Emitting Diode for Still Camera Light Source for Auto Focus
|
Toshiba Corporation
Toshiba Semiconductor
|
| LN59L |
GaAs Bi-directional Infrared Light Emitting Diodes 2.5 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
Panasonic, Corp.
|
| SIR-563ST3F07 |
Infrared light emitting diode, top view type
5 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
Rohm
|
| C4880-80 C4880-80-12A C4880-80-14A C4880-80-22A C4 |
12-bit idigital CCD camera. For faint light observation under a microscope, continuous imaging of high-speed moving objects, kinetic changes in light intensity
10-bit idigital CCD camera. For faint light observation under a microscope, continuous imaging of high-speed moving objects, kinetic changes in light intensity
Fast scan multi format Cooled CCD Camera
Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TV06; No. of Contacts:22; Connector Shell Size:13; Connecting Termination:Crimp; Circular Shell Style:Straight Plug; Body Style:Straight
|
HAMAMATSU[Hamamatsu Corporation]
Hamamatsu Photonics
|
| TSHG5510 |
High Speed Infrared Emitting Diode
|
Vishay Siliconix
|
| GL550 GL551 |
High Speed Infrared Emitting Diode
|
Sharp Electrionic Compo...
Sharp Corporation
|
| VSLB4940 |
High Speed Infrared Emitting Diode
|
Vishay Siliconix
|
| SFH4000 |
Schnelle IR-Lumineszenzdiode High Speed Infrared Emitter
|
OSRAM GmbH
|
| VSMG2020X01 VSMG2000X01 |
High Speed Infrared Emitting Diodes, 850 nm, GaAlAs, DH
|
Vishay Siliconix
|
| VSMB2020X01 VSMB2000X01 |
High Speed Infrared Emitting Diodes, 940 nm, GaAlAs, DH
|
Vishay Siliconix
|
| VSMG10850-13 |
High Speed Infrared Emitting Diode, 850 nm, GaAlAs, DH
|
Vishay Siliconix
|
