| PART |
Description |
Maker |
| MH16S64PHB-6 |
1,073,741,824-BIT ( 16,777,216-WORD BY 64-BIT ) Synchronous DYNAMIC RAM
|
Mitsubishi Electric Corporation
|
| MH16S64BAMD-6 B99029 |
From old datasheet system
1,073,741,824-BIT ( 16,777,216-WORD BY 64-BIT ) Synchronous DYNAMIC RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MH16S72PHB-6 B99032 |
1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
From old datasheet system
1 /207 /959 /552-BIT ( 16 /777 /216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MH16S72APHB-7 MH16S72APHB-6 MH16S72APHB-8 |
1,207,959,552-BIT (16,777,216 - WORD BY 72-BIT)Synchronous DRAM
|
Mitsubishi Electric Corporation
|
| MH16S72DCFA-6 |
1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
|
Mitsubishi Electric Corporation
|
| MH16S72DDFA-8 MH16S72DDFA-7 B99058 |
From old datasheet system
1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M6MGT160S2BVP M6MGB160S2BVP |
16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| HM5116100S-5 |
16,777,216-word x 1-bit Dynamic RAM
|
Hitachi Semiconductor
|
| PD42S65405 PD4264405 |
16,777,216 Words by 4 Bits CMOS Dynamic RAMs(64M 动态RAM) 16,777,216词由4位的CMOS动态存储器（RAM400动态）
16,777,216 Words by 4 Bits CMOS Dynamic RAMs(64M ?ㄦ?RAM)
|
NEC, Corp.
NEC Corp.
|
| MK32VT1632 MK32VT1632-10YC |
16,777,216 Word x 32 Bit SYNCHRONOUS DYNAMIC RAM MODULE (2BANK)
|
OKI[OKI electronic componets]
|
| MK32VT1672A-8YC MK32VT1672A |
16,777,216 Word x 72 Bit SYNCHRONOUS DYNAMIC RAM MODULE (2BANK)
|
OKI[OKI electronic componets]
|
| AK59256 |
16,777,216 Word by 9 Bit CMOS Dynamic Random Access Memory
|
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