| PART |
Description |
Maker |
| MH16S64BAMD-6 |
1 /073 /741 /824-BIT ( 16 /777 /216-WORD BY 64-BIT ) Synchronous DYNAMIC RAM
1,073,741,824-BIT ( 16,777,216-WORD BY 64-BIT ) Synchronous DYNAMIC RAM 1073741824位（16,777,21664位）同步动态随机存储器
|
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| MH16S64APHB-6 MH16S64APHB-7 MH16S64APHB-8 |
1 /073 /741 /824-BIT (16 /777 /216 - WORD BY 64-BIT)Synchronous DRAM
1,073,741,824-BIT (16,777,216 - WORD BY 64-BIT)Synchronous DRAM 1073741824位（16,777,216 -文字4位）同步DRAM
|
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| MH16D64AKQC-10 MH16D64AKQC-75 |
1 /073 /741 /824-BIT (16 /777 /216-WORD BY 64-BIT) Double Data Rate Synchronous DRAM Module
JT 55C 55#20 PIN PLUG
|
Mitsubishi Electric Corporation
|
| MH16S64PHB-6 B99031 |
1,073,741,824-BIT ( 16,777,216-WORD BY 64-BIT ) Synchronous DYNAMIC RAM
From old datasheet system
1073741824-BIT ( 16777216-WORD BY 64-BIT ) Synchronous DYNAMIC RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M6MGB_T160S4BVP M6MGB M6MGB160S4BVP M6MGT160S4BVP |
16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY
16,777,216-BIT CMOS 3.3V-ONLY FLASH MEMORY
CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M6MGB_T160S2BVP M6MGB E99003_A |
16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY
16,777,216-BIT (1,048,576 -WORD BY 16-BIT 2,097,152-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY
From old datasheet system
|
Mitsubishi
|
| MH16S72BDFA-8 MH16S72BDFA-7 |
1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MH16S72VJB-6 B99037 |
From old datasheet system
1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M5M29GB M5M29GB161BWG M5M29GT161BWG E99002_A M5M29 |
16,777,216-bit (1048,576-word by 16-bit) CMOS 3.3V-only, block erase flash memory
From old datasheet system
16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
16 /777 /216-BIT (1048 /576-WORD BY16-BIT) CMOS 3.3V-ONLY / BLOCK ERASE FLASH MEMORY
CMOS 3.3V-only block erase flash memory
|
http://
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| 75220 |
1.85 by 1.85mm (.073 by .073) Pitch GbX? Module-to-Backplane Connector System In 4- and 5-Pair Columns
|
Molex Electronics Ltd.
|
| M5M29GT160BVP-80 M5M29GB160BVP-80 |
16 /777 /216-BIT (2097 /152-WORD BY 8-BIT / 1048 /576-WORD BY16-BIT)CMOS 3.3V-ONLY / BLOCK ERASE FLASH MEMORY
16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
|
Mitsubishi Electric Corporation
|
| AK5916384GP-60 AK5916384SP-70 |
16,777,216 Word by 9 Bit CMOS Dynamic Random Access Memory
|
ACCUTEK MICROCIRCUIT CORPORATION
|
