| PART |
Description |
Maker |
| K4H560438J-LC/LB0 K4H560438J-LC/LB3 K4H560838J-LC/ |
256Mb J-die DDR SDRAM Specification
|
Samsung semiconductor
|
| K4S560432E-TC K4S560432E-TC75 K4S561632E-TL75 K4S5 |
256Mb E-die SDRAM Specification 256Mb的电子芯片内存规
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| K4T56163QI K4T56163QI-ZCLCC K4T56163QI-ZCLD5 K4T56 |
256Mb I-die DDR2 SDRAM Specification
|
Samsung semiconductor
|
| K4H560838D-TCC4 K4H560838D-TCCC K4H561638D-TCCC K4 |
256Mb D-die DDR400 SDRAM Specification 256Mb芯片支持DDR400内存规格
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K4H560838E-VLB3 K4H560438E-VC K4H560438E-VC_LA2 K4 |
256Mb E-die DDR SDRAM Specification 54 sTSOP-II with Pb-Free (RoHS compliant)
|
SAMSUNG[Samsung semiconductor]
|
| AM29BL802C_03 AM29BL802C AM29BL802CB80DGE1 AM29BL8 |
Am29BL802C (Known Good Die Supplement)
8 Megabit (512 K x 16-Bit) CMOS 3.0 Volt-only, Burst-mode, Boot Sector Flash Memory-Die Revision 1
|
Advanced Micro Devices
SPANSION[SPANSION]
|
| K4T56083QF-GCD5 K4T56083QF-ZCD5 K4T56043QF-GCD5 K4 |
256Mb F-die DDR2 SDRAM
OSC 3.3V SMT 7X5 CMOS 256Mb的的F - DDR2内存芯片
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| AM29F010-1 AM29F010-120DGC1 AM29F010-120DGE1 AM29F |
1 megabit CMOS 5.0 volt-only, uniform sector flash memory- die revision 1
1 Megabit (128 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash MemoryDie Revision 1
1 Megabit (128 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory-Die Revision 1 128K X 8 FLASH 5V PROM, 120 ns, UUC30
1 Megabit (128 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory-Die Revision 1 128K X 8 FLASH 5V PROM, 90 ns, UUC30
Evaluation Board for LM3202 650mA Miniature, Adjustable, Step-Down DC-DC Converter for RF Power Amplifiers 128K X 8 FLASH 5V PROM, 90 ns, UUC30
LM3202 650mA Miniature, Adjustable, Step-Down DC-DC Converter for RF Power Amplifiers; Package: MICRO SMD; No of Pins: 8
1 Megabit (128 K x 8-Bit) CMOS 5.0 Volt-only Uniform Sector Flash Memory-Die Revision 1
1 Megabit (128 K x 8-Bit) CMOS 5.0 Volt-only/ Uniform Sector Flash Memory-Die Revision 1
|
ADVANCED MICRO DEVICES INC
PROM
Advanced Micro Devices, Inc.
AMD[Advanced Micro Devices]
|
| M381L6423DTM-LCC_C4 M368L1624DTM M368L1624DTM-CCC |
184pin Unbuffered Module based on 256Mb D-die 64/72-bit Non ECC/ECC
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| M381L6423ETM-LC5 M368L3223ETM-CC5 M368L3223ETM-LC5 |
184pin Unbuffered Module based on 256Mb E-die 64/72-bit ECC/Non ECC
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K4S560432E-NC75 K4S560832E-NC75 K4S560832E-NL75 K4 |
256Mb E-die SDRAM Specification 54pin sTSOP-II 256Mb的电子芯片内存规4pin sTSOP -
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K4H560838E-GCCC K4H560838E-GCC4 |
256Mb E-die DDR 400 SDRAM Specification 60Ball FBGA (x4/x8)
|
Samsung semiconductor
|
