| PART |
Description |
Maker |
| N02L163WN1AT2-55I N02L163WN1A N02L163WN1AB N02L163 |
2Mb Ultra-Low Power Asynchronous CMOS SRAM
|
etc
NANOAMP[NanoAmp Solutions, Inc.]
Electronic Theatre Controls, Inc.
|
| N02L083WC2AT2 N02L083WC2A N02L083WC2AN N02L083WC2A |
2Mb Ultra-Low Power Asynchronous CMOS SRAM 256K x 8 bit
|
etc
NANOAMP[NanoAmp Solutions, Inc.]
Electronic Theatre Controls, Inc.
|
| N02L63W3AB25I N02L63W3AB5IT N02L63W3A |
2 Mb Ultra-Low Power Asynchronous CMOS SRAM
2 Mb, 3 V Low Power SRAM; Package: BGA; No of Pins: 48; Container: Tape and Reel; Qty per Container: 2500 128K X 16 STANDARD SRAM, 70 ns, PBGA48
2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K ? 16bit
|
ON Semiconductor
|
| K6F2016R4G-XF85 K6F2016R4G K6F2016R4G-F K6F2016R4G |
2Mb(128K x 16 bit) Low Power SRAM
|
SAMSUNG[Samsung semiconductor]
|
| HY62UF16201A |
Super Low Power Slow SRAM - 2Mb
|
Hynix Semiconductor
|
| ISL55290IUZ-T13 |
Single and Dual Ultra-Low Noise, Ultra-Low Distortion, Low Power Op Amp DUAL OP-AMP, 500 uV OFFSET-MAX, 800 MHz BAND WIDTH, PDSO10
|
Intersil, Corp.
|
| HY62V8200B HY62V8200BLLR1 HY62V8200BLLR1-E HY62V82 |
Low Power Slow SRAM - 2Mb
HY62V8200B Series 256Kx8bit CMOS SRAM
|
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
http://
|
| KM7101 |
Ultra-Low Cost, 136uA, 4.9MHz Rail-to-Rail I/O Amplifier
From old datasheet system
an ultra-low cost, low power, voltage feed-back
|
Fairchild Semiconductor
|
| IC62VV25616LL IC62VV25616L IC62VV25616LL-70TI IC62 |
OSC 5V 14PIN TTL 256Kx161.8V和超低功耗CMOS静态RAM
256Kx16 bit 1.8V and Ultra Low Power CMOS Static RAM 256Kx161.8V和超低功耗CMOS静态RAM
ASYNCHRONOUS STATIC RAM, Low Power A.SRAM
70ns; 1.8V; 256K x 16 ultra low power CMOS static RAM
|
Integrated Circuit Solu...
Fuji Electric Holdings Co., Ltd.
ICSI[Integrated Circuit Solution Inc]
|
