| PART |
Description |
Maker |
| BS616LV4010DC BS616LV4010 BS616LV4010AC BS616LV401 |
Very Low Power/Voltage CMOS SRAM 256K X 16 bit 非常低功电压CMOS SRAM56 × 16
LM4985 Boomer ® Audio Power Amplifier Series Stereo 135mW Low Noise Headphone Amplifier with Selectable Capacitively Coupled or Output Capacitor-less (OCL) Output and Digitally Controlled (I2C) V; Package: MICRO SMD; No of Pins: 12
|
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
|
| ADM230L-ADM241L ADM233L ADM235L ADM236L ADM223 ADM |
Low Power, 5V CMOS RS-232 100kBPS Transceiver with 3 Drivers, 5 Receivers and an Enable Pin
Low Power, 5V CMOS RS-232 100kBPS Transceiver with 2 Drivers/Receivers
Low Power, 5V CMOS RS-232 100kBPS Quad Driver
Low Power, 5V CMOS RS-232 Transceiver with 2 Drivers and 2 Receivers
5V CMOS RS-232 Transceiver with 4 Drivers, 5 Receivers and Shutdown and Enable Pins
Low Power, 5V CMOS RS-232 100kBPS Transceiver with 4 Drivers, 3 Receivers and Shutdown and Enable Pins
Low Power, 5V CMOS RS-232 Transceiver with 5 Drivers, 5 Receivers, Shutdown and Enable Pins. No External Capacitors Required
Low Power, 5V CMOS RS-232 120kBPS Transceiver with 2 Drivers & 2 Receivers. No External Capacitors Required
5 V Powered CMOS RS-232 Driver/Receivers
Low Power, 5V CMOS RS-232 Interface Device with 5 Drivers and a Shutdown Feature
|
Analog Devices
|
| HY62V8200B HY62V8200BLLR1 HY62V8200BLLR1-E HY62V82 |
Low Power Slow SRAM - 2Mb
HY62V8200B Series 256Kx8bit CMOS SRAM
|
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
http://
|
| GLT6100L08LL-55TC GLT6100L08LL-70TC GLT6100L08LL-8 |
55ns; Ultra low power 64K x 16 CMOS SRAM
70ns; Ultra low power 64K x 16 CMOS SRAM
85ns; Ultra low power 64K x 16 CMOS SRAM
100ns; Ultra low power 64K x 16 CMOS SRAM
|
G-LINK Technology
|
| TC1426CPA TC1427 TC1427CPA TC1428 TC1428COA TC1427 |
CSCA-A Series Hall-effect based, open-loop current sensor, Gallant connector, 600 A rms nominal, ±900 A range 1.2A的双路高速MOSFET驱动
1.2A Dual High-Speed MOSFET Drivers 1.2A的双路高速MOSFET驱动
The TC1426/27/28 are a family of 1.2A dual high- speed drivers. CMOS fabrication is used for low power consumption and high efficiency. These devices are fabricated using an epitaxial layer to effectively short out the intrinsic parasitic
The TC1426/27/28 are a family of 1.2A dual high- speed drivers. CMOS fabrication is used for low power consumption and high efficiency. ...
|
Microchip Technology, Inc.
MICROCHIP[Microchip Technology]
|
| IS62WV51216BLL-55BLI IS62WV51216ALL-70XI IS62WV512 |
512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM 512K X 16 STANDARD SRAM, 45 ns, PBGA48
512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM 12k × 16低电压，超低功耗的CMOS静态RAM
512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM 512K X 16 STANDARD SRAM, 55 ns, PDSO44
|
Integrated Silicon Solution, Inc.
|
| KM6264B KM6264BLP-7L KM6264BLG-10 KM6264BLG-10L KM |
8K x 8 bit CMOS static RAM, 100ns, low low power
8K x 8 bit Low Power CMOS Static RAM
8Kx8 bit Low Power CMOS Static RAM 8Kx8位低功耗CMOS静态RAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| TC74LCXZ244FK TC74LCXZ244FT |
74LCX low voltage CMOS logic IC series
|
TOSHIBA
|
| 74LCX540FT |
74LCX low voltage CMOS logic IC series
|
TOSHIBA
|
| TC74LCXZA240FK TC74LCXZA240FT |
74LCX low voltage CMOS logic IC series
|
TOSHIBA
|
| 74LCX126FT |
74LCX low voltage CMOS logic IC series
|
TOSHIBA
|
| IC62C1024AL IC62C1024ALNEW IC62C1024AL-35QI IC62C1 |
55ns; 5V; 128K x 8 low power CMOS static RAM
128K X 8 LOW POWER CMOS SRAM
From old datasheet system
ASYNCHRONOUS STATIC RAM, Low Speed A.SRAM
|
ICSI[Integrated Circuit Solution Inc]
|
