PART |
Description |
Maker |
2N5401 |
PNP Transistor Plastic-Encapsulate Transi stors
|
SeCoS Halbleitertechnologie GmbH
|
MJE2955T03 MJE34003 MJE52103 MJE585203 MJE80203 MR |
COMPLEMENTARY SILICON POWER TRANSISTORS COMPLEMETARY SILICON POWER TRANSISTORS SILICON NPN TRANSISTOR HIGH VOLTAGE PNP POWER TRANSISTOR SILICON NPN POWER DARLINGTON TRANSISTOR RF Power Field Effect Transistors 880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs RF LDMOS Wideband Integrated Power Amplifiers GENERAL PURPOSE L TO X-BAND GaAs MESFET 10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
FREESCALE NEC STMICROELECTRONICS[STMicroelectronics]
|
1N1341B 1N1585 1N1587 1N1068 1N1064 1N2232A 1N2232 |
SILICON POWER RECTIFIER 16 A, 600 V, SILICON, RECTIFIER DIODE, DO-203AA SILICON POWER RECTIFIER 16 A, 150 V, SILICON, RECTIFIER DIODE, DO-203AA SILICON POWER RECTIFIER 16 A, 100 V, SILICON, RECTIFIER DIODE, DO-203AA SILICON POWER RECTIFIER 16 A, 300 V, SILICON, RECTIFIER DIODE, DO-203AA SILICON POWER RECTIFIER 16 A, 50 V, SILICON, RECTIFIER DIODE, DO-203AA Standard Rectifier (trr more than 500ns) N/A SILICON POWER RECTIFIER
|
MICROSEMI CORP-LAWRENCE Microsemi, Corp. MICROSEMI[Microsemi Corporation]
|
NTE5864 NTE5889 NTE5865 |
Silicon power rectifier diode. Anode to case. Peak reverse voltage 200V. Max forward current 30A. Silicon Power Rectifier Diode, 25 Amp Silicon Power Rectifier Diode 25 Amp Silicon Power Rectifier Diode / 25 Amp
|
NTE[NTE Electronics]
|
2N6504G 2N650406 2N6667G 2N666705 2N6509TG 2N6504 |
Silicon Controlled Rectifiers Reverse Blocking Thyristors SCRs 25 AMPERES RMS 50 thru 800 VOLTS Darlington Silicon Power Transistors PNP SILICON DARLINGTON POWER TRANSISTORS 10 A, 60?80 V, 65 W
|
ONSEMI[ON Semiconductor]
|
BUX85_D ON0262 BUX85 |
SITCHMODE NPN Silicon Power Transistors From old datasheet system 2 AMPERES POWER TRANSISTOR NPN SILICON 450 VOLTS 50 WATTS
|
ON Semiconductor Motorola, Inc
|
NE5531079A-T1 NE5531079A-T1-A NE5531079A-T1A-A |
7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS SILICON POWER MOS FET
|
California Eastern Labs
|
NTE5906 NTE6005 NTE5980 NTE5907 NTE5995 NTE5986 NT |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 400V. Average forward current 40A. Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1600V. Average forward current 40A. Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A. Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A. Receptacle With A Wire Wrap Tail Silicon Power Rectifier Diode / 40 Amp Silicon Power Rectifier Diode 40 Amp NTE5906, NTE5907, NTE5980 thru NTE6005 Silicon Power Rectifier Diode, 40 Amp 40 A, 300 V, SILICON, RECTIFIER DIODE 40 A, 200 V, SILICON, RECTIFIER DIODE
|
NTE Electronics, Inc. NTE[NTE Electronics]
|
S35100 R35140 S3560 S3520 S3580 S3540 R3580 1N4137 |
Silicon Power Rectifier 70 A, 600 V, SILICON, RECTIFIER DIODE, DO-203AB Silicon Power Rectifier 70 A, 1400 V, SILICON, RECTIFIER DIODE, DO-203AB Silicon Power Rectifier 70 A, 1600 V, SILICON, RECTIFIER DIODE, DO-203AB
|
Microsemi, Corp. MICROSEMI[Microsemi Corporation]
|
BUV21 BUV21_D ON0257 |
From old datasheet system 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 250 WATTS SITCHMODE Series NPN Silicon Power Transistor
|
Motorola, Inc. ON Semiconductor
|
BD135 BD139 ON0184 BD137 |
Plastic Medium Power Silicon NPN Transistor 1.5 A, 45 V, NPN, Si, POWER TRANSISTOR, TO-225AA POWER TRANSISTORS NPN SILICON CASE 77-09 TO-225AA TYPE From old datasheet system
|
Motorola Mobility Holdings, Inc. ON Semiconductor MOTOROLA[Motorola Inc] MOTOROLA[Motorola, Inc]
|