| PART |
Description |
Maker |
| GM71C17400 GM71C17400CJ GM71CS17400CL GM71C17400CL |
4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM
4,194,304 words x 4 bit CMOS dynamic RAM, 60ns
4M X 4 FAST PAGE DRAM, 50 ns, PDSO24
x4 Fast Page Mode DRAM 4M X 4 FAST PAGE DRAM, 60 ns, PDSO24
4Mx4|5V|2K|5/6/7|FP/EDO DRAM - 16M
IC REG LDO 1A 12V SHDN TO220FP-5
null4/194/304 WORDS x 4 BIT CMOS DYNAMIC RAM
null4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM
4,194,304 words x 4 bit CMOS dynamic RAM, 50ns
4,194,304 words x 4 bit CMOS dynamic RAM, 70ns
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
|
| KM416C1004CJ-5 KM416C1004CJ-6 KM416C1004CJL-6 KM41 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=64ms
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=64ms
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=16ms
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=16ms
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, self-refresh
|
Samsung Electronic
|
| GM71V18163C GM71V18163C-5 GM71V18163C-6 GM71V18163 |
1M words x 16 bit CMOS dynamic RAM, 3.3V, 60ns
1,048,576 WORDS x 16 BIT CMOS DYNAMIC RAM
|
Hynix Semiconductor
|
| KM44C1000D KM44V1000D KM44C1000DJL-7 KM44C1000DJL- |
1M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 70ns
1M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns
1M x 4bit CMOS dynamic RAM with fast page mode, 5V, 50ns
1M x 4bit CMOS dynamic RAM with fast page mode, 5V, 60ns
1M x 4bit CMOS dynamic RAM with fast page mode, 5V, 70ns
|
Samsung Electronic
|
| KM48V8104C KM48V8004C KM48V8104CK-45 KM48V8104CKL- |
8M x 8bit CMOS dynamic RAM with extended data out, 50ns
8M x 8bit CMOS dynamic RAM with extended data out, 45ns
8M x 8bit CMOS dynamic RAM with extended data out, 60ns
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| KM416C256DLJ-7 KM416V256DLJ-5 KM416C256DLJ-5 KM416 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 70ns, 5V, self-refresh capability
256K x 16Bit CMOS dynamic RAM with fast page mode, 50ns, 3.3V, self-refresh capability
256K x 16Bit CMOS dynamic RAM with fast page mode, 50ns, 5V, self-refresh capability
256K x 16Bit CMOS dynamic RAM with fast page mode, 60ns, 5V, self-refresh capability
256K x 16Bit CMOS dynamic RAM with fast page mode, 60ns, 3.3V, self-refresh capability
256K x 16Bit CMOS dynamic RAM with fast page mode, 70ns, 3.3V, self-refresh capability
|
Samsung Electronic
|
| KM416V4104B KM416V4004B KM416V4004BSL-45 KM416V400 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns, low power
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| GLT41216-30J4 GLT41216-30TC GLT41216-35J4 GLT41216 |
30ns; 64K x 16 CMOS dynamic RAM with extended data output
35ns; 64K x 16 CMOS dynamic RAM with extended data output
40ns; 64K x 16 CMOS dynamic RAM with extended data output
45ns; 64K x 16 CMOS dynamic RAM with extended data output
|
G-LINK Technology
|
| V53C8125H V53C8125H30 V53C8125H35 V53C8125H40 V53C |
Ultra-high performance 128K x 8bit fast page mode CMOS dynamic RAM
ULTRA-HIGH PERFORMANCE, 128K X 8 FAST PAGE MODE CMOS DYNAMIC RAM 超高性能28K的乘八快速页面模式的CMOS动态随机存储器
OSC 3.3V SMT 7X5 CMOS 超高性能28K的乘八快速页面模式的CMOS动态随机存储器
ULTRA-HIGH PERFORMANCE/ 128K X 8 FAST PAGE MODE CMOS DYNAMIC RAM
|
Mosel Vitelic Corp
Mosel Vitelic, Corp.
Mosel Vitelic Corp
|
| V53C16129H V53C16129HK60 |
High performance 128K x 16 EDO page mode CMOS dynamic RAM
HIGH PERFORMANCE 128K X 16 BIT FAST PAGE MODE CMOS DYNAMIC RAM
|
MOSEL[Mosel Vitelic Corp]
Mosel Vitelic, Corp
|
| MB8116165B-50 MB8116165B-60 |
1 M ×16 BIT
Hyper Page Mode Dynamic RAM(CMOS 1 M ×16位超级页面存取模式动态RAM)
1 M ?16 BIT Hyper Page Mode Dynamic RAM(CMOS 1 M ?16浣??绾ч〉?㈠???ā寮????AM)
|
Fujitsu Limited
|
|
