| PART |
Description |
Maker |
| MXP1048PC_PV-IR MXP1049PV-IR MXP1049PC-IR MXP1048P |
Photovoltaic Detectors
Photoconductive Detectors
From old datasheet system
IR Enhanced Photo Detectors PHOTO DIODE
CAP .033UF 50V CERAMIC MONO 10% PHOTO DIODE
|
http://
MICROSEMI[Microsemi Corporation]
Microsemi, Corp.
|
| LA7680 LA7681 LA76818 |
Single-Chip Signal Processor for Color TV Use
TV/VIDEO SIGNAL PROCESSOR,BIPOLAR,SDIP,48PIN,PLASTIC
Single Chip Signal Processor for Color TV
From old datasheet system
|
Sanyo Semicon Device
Sanyo Semiconductor Corp
|
| JAN1N3612 JANTX1N3957 |
DIODE 1 A, 400 V, SILICON, SIGNAL DIODE, DO-204AL, PLASTIC, EG1, 2 PIN, Signal Diode
DIODE 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-204AL, Signal Diode
|
Vishay Semiconductors
|
| TLP590B |
SPECIALTY OPTOELECTRONIC DEVICE
GaAS As Ired & Photo−Diode Array
Photocoupler GaAlAs Ired & Photo .Diode Array
|
Toshiba Semiconductor
|
| MTD1114M3B MTD1200M3B-15 |
The MTD1114M3B is a photo diode in a ceramic package. It is well suited for high reliability and high sensitivity applications.
Photo Diode
|
Marktech Corporate
|
| 1N4150-1 JANTXV1N4150-1 |
Signal or Computer Diode; Package: DO-35; IO (A): 0.2; Cj (pF): 2.5; Vrwm (V): 50; trr (nsec): 4; VF (V): 0.74; IR (µA): 0.1; 0.2 A, 50 V, SILICON, SIGNAL DIODE, DO-35
SWITCHING DIODE
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| MB86330 MB86330CR-ES |
Processor Digital Signal Processor CMOS - 16-bit Fixed-point DSP
|
Fujitsu Microelectronics
FUJITSU[Fujitsu Media Devices Limited]
|
| HD49235 HD49235FS |
IC,AUDIO PROCESSOR,QFP,80PIN,PLASTIC
Digital Signal Processor for CD
|
HITACHI[Hitachi Semiconductor]
Renesas
|
| EGP10GT50A EGP10JT50A EGP10KT50R EGP10D EGP10B |
Fast Rectifiers (Glass Passivated)
1 A, 800 V, SILICON, SIGNAL DIODE, DO-41
1 A, 600 V, SILICON, SIGNAL DIODE, DO-41
1 A, 400 V, SILICON, SIGNAL DIODE, DO-41
|
FAIRCHILD SEMICONDUCTOR CORP
|
| VS-10BQ040TRPBF |
DIODE 40 V, SILICON, SIGNAL DIODE, ROHS COMPLIANT, SIMILAR TO DO-214AA, SMB, 2 PIN, Signal Diode
|
Vishay Semiconductors
|
|
