| PART |
Description |
Maker |
| AN1266 |
BENCHMARKING FLASH NOR AND FLASH NAND MEMORIES
|
SGS Thomson Microelectronics
|
| NAND512W4A2CZA6F NAND512R3A2C NAND512R3A2CN6E NAND |
512 Mbit, 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
|
STMICROELECTRONICS[STMicroelectronics]
|
| NAND08GW3B2A NAND04GW3B2AN1E NAND08GW3B2AN1E NAND0 |
4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories
|
Numonyx B.V
|
| K9F5608U0M- K9F5608U0M-YCB0 K9F5608U0M-YIB0 |
From old datasheet system
EEPROM,NAND FLASH,33MX8,CMOS,TSSOP,48PIN,PLASTIC
32M x 8 Bit NAND Flash Memory
|
Samsung Electronics Inc
SAMSUNG[Samsung semiconductor]
|
| K9F1208Q0A-XXB0 K9F1208Q0B K9F1208Q0A-DIB0 K9F1208 |
64M x 8 bit NAND flash memory, 2.7 - 3.6V
512Mb/256Mb 1.8V NAND Flash Errata
64M x 8 bit NAND flash memory, 1.70 - 1.95V
32M x 16 bit NAND flash memory, 2.7 - 3.6V
32M x 16 bit NAND flash memory, 1.70 - 1.95V
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| S29NS-J S29NS032J0PBAW003 S29NS064J0PBAW00 S29NS06 |
110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories 110纳米CMOS 1.8伏只有同时读/写，突发模式闪存
110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories 2M X 16 FLASH 1.8V PROM, 65 ns, PBGA44
|
Spansion Inc.
Spansion, Inc.
|
| PSD835G2-70U PSD835G2-90U PSD835G2-90UI |
Flash PSD, 5V Supply, for 8-bit MCUs, 4Mb 256 Kbit Dual Flash Memories and 64 Kbit SRAM
|
ST Microelectronics
|
| CY7C68023-56LTXC |
EZ-USB NX2LP USB 2.0 NAND Flash Controller 3.3 V NAND Flash Operation
|
Cypress Semiconductor
|
| HN29V25611ABP |
AND Flash Memories
|
Hitachi Semiconductor
|
| M58WR064HB M58WR064HT |
1.8 V supply Flash memories
|
ST Microelectronics
|
| DSK9K1208U0A K9K1208U0A-YCB0 K9K1208U0A-YIB0 DS_K9 |
64M x 8 Bit / 32M x 16 Bit NAND Flash Memory
TV 16C 16#16 SKT RECP 6400 × 8位NAND闪存
64M x 8 Bit NAND Flash Memory Data Sheet
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
