| PART |
Description |
Maker |
| G03H1202 |
High Speed 2-Technology
|
Infineon
|
| IGW40N60H3 |
High speed IGBT in Trench and Fieldstop technology
|
Infineon Technologies AG
|
| IKP20N60H3 |
High speed IGBT in Trench and Fieldstop technology
|
Infineon Technologies A...
|
| IGW20N60H3 |
High speed IGBT in Trench and Fieldstop technology
|
Infineon Technologies A...
|
| EM78P458 EM78P459 EM78P458AM EM78P459AM EM78P459AK |
8-bit microprocessors with low-power and high-speed CMOS technology
|
ELAN Microelectronics Corp
EMC
|
| SIGC07T60UN |
High Speed IGBT Chip in NPT-technology positive temperature coefficient
|
Infineon Technologies AG
|
| VSLY5940 VSLY5940-CS21 |
High Speed Infrared Emitting Diode, 940 nm, Surface Emitter Technology
|
Vishay Siliconix
|
| SKW20N60HS SKW20N60HS08 |
High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| IKW50N65H5 IKW50N65H5-15 |
High speed 5 IGBT in TRENCHSTOP 5 technology copacked with RAPID 1 fast and soft antiparallel diode
|
Infineon Technologies A...
|
| VSMY2853G VSMY2853RG |
High Speed Infrared Emitting Diodes, 850 nm, Surface Emitter Technology
Miniature light barrier
|
Vishay Siliconix
|
| IKW15N120H3 |
High speed Duopack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode
|
http://
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