PART |
Description |
Maker |
IGW15N120H3 |
High speed IGBT in Trench and Fieldstop technology
|
Infineon Technologies AG
|
AIGW40N65F5 |
High speed fast IGBT in TRENCHSTOPTM 5 technology
|
Infineon Technologies A...
|
EM78P156EH EM78P156EHAS EM78P156EHKM EM78P156EHM E |
8-bit microprocessor with low-power and high-speed CMOS technology
|
EMC[ELAN Microelectronics Corp]
|
VSMY2850G VSMY2850RG |
High Speed Infrared Emitting Diodes, 850 nm, Surface Emitter Technology
|
Vishay Siliconix
|
VSLY5850 |
High Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology
|
Vishay Siliconix
|
VSMY3940X01-GS08 VSMY3940X01-GS18 |
High Speed Infrared Emitting Diode, 940 nm,Surface Emitter Technology
|
Vishay Siliconix
|
SGW50N60HS SGW50N60HS09 |
High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
SKB15N60HS07 |
High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
EM78P156EL EM78P156ELAS EM78P156ELKM EM78P156ELM E |
8-bit microprocessor designed and developed with low-power and high-speed CMOS technology
|
ELAN Microelectronics Corp
|
IKW50N65H5 IKW50N65H5-15 |
High speed 5 IGBT in TRENCHSTOP 5 technology copacked with RAPID 1 fast and soft antiparallel diode
|
Infineon Technologies A...
|
EP910I EP1810 EP910 EP610 EP610I EP910LC-30 |
CPLD, EP910 Family, ECMOS Process, 450 Gates, 24 Macro Cells, 24 Reg., 24 User I/Os, 5V Supply, 30 Speed Grade, 44LDCC The Altera Classic device family offers a solution to high-speed, lowpower logic integration. Fabricated on advanced CMOS technology
|
Altera Corporation
|