| PART |
Description |
Maker |
| OPB871N51TX OPB871N51TV OPB872N51TV |
256K, 32K X 8, 2.5V SER EE, -40C to 85C, 8-SOIC 150mil, TUBE
256K, 32K X 8, 2.5V SER EE, -40C to 85C, 8-SOIC 208mil, TUBE
Photo Gap Detector
|
|
| 74LVT16244MEAX |
256K, 32K X 8, 2.5V SER EE, -40C to 85C, 8-TSSOP, T/R 位缓冲器/驱动
|
Bourns, Inc.
|
| AT27C256R-15PI AT27C256R-15TC |
150NS, PDIP, IND TEMP(EPROM) 32K X 8 OTPROM, 150 ns, PDIP28
32K X 8 OTPROM, 150 ns, PDSO28
|
Atmel, Corp.
ATMEL CORP
|
| AT88SC3216C-MJ AT88SC3216C-MJTG AT88SC3216C-PU AT8 |
8 SOIC, IND TEMP, GREEN(EMBEDDED CRYPTO PROD) 32K X 1 I2C/2-WIRE SERIAL EEPROM, PDSO8
CryptoMemory 32 Kbit
|
Atmel, Corp.
聚兴科技股份有限公司
ATMEL Corporation
|
| GS81032AT-150I GS81032AT-138I GS81032AT-133I GS810 |
18ns 66MHz 32K x 32 1Mb synchronous burst SRAM
12ns 100MHz 32K x 32 1Mb synchronous burst SRAM
10ns 133MHz 32K x 32 1Mb synchronous burst SRAM
9.7ns 138MHz 32K x 32 1Mb synchronous burst SRAM
11ns 117MHz 32K x 32 1Mb synchronous burst SRAM
9ns 150MHz 32K x 32 1Mb synchronous burst SRAM
32K x 32 1M Synchronous Burst SRAM 32K X 32 CACHE SRAM, 9.7 ns, PQFP100
32K x 32 1M Synchronous Burst SRAM 32K X 32 CACHE SRAM, 18 ns, PQFP100
32K x 32 1M Synchronous Burst SRAM 32K X 32 CACHE SRAM, 10 ns, PQFP100
32K x 32 1M Synchronous Burst SRAM
|
GSI Technology, Inc.
|
| 74LVT16374 74LVTH16374 74LVT16374GX 74LVTH16374GX |
32K, 4K X 8, 2.5V SER EE EXT, -40C to 125C, 8-SOIC 208mil, T/R 触发器| 16位| D型|小型终端/ ALVT，BICMOS工艺| SSOP封装| 48PIN |塑料
Low Voltage 16-Bit D-Type Flip-Flop
From old datasheet system
Low Voltage 16-Bit D Flip-Flop with 3-STATE Outputs
|
ON Semiconductor
Fairchild Semiconductor
|
| ISC1812BN8R2K ISC1812ES4R7K ISC1812BN1R5J ISC1812E |
General Fixed Inductor, IND,POWDERED IRON,8.2UH,10% TOL,10% -TOL,1812 CASE
General Fixed Inductor, 1 ELEMENT, 4.7 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR, SMD, CHIP, 1812, HALOGEN FREE AND ROHS COMPLIANT
General Fixed Inductor, IND,POWDERED IRON,1.5UH,5% TOL,5% -TOL,1812 CASE
General Fixed Inductor, IND,FERRITE,120UH,5% TOL,5% -TOL,1812 CASE
General Fixed Inductor, IND,FERRITE,560UH,5% TOL,5% -TOL,1812 CASE
General Fixed Inductor, IND,FERRITE,270UH,10% TOL,10% -TOL,1812 CASE
General Fixed Inductor, IND,POWDERED IRON,22UH,5% TOL,5% -TOL,1812 CASE
ISC-1812 Wirewound, Surface Mount, Molded, Shielded Inductors
IND CHIP SHLD/MLD 330NH 5% 25.2MHZ 30Q-FCTR 394MA 1812 - Bulk
IND CHIP SHLD/MLD 150NH 20% 25.2MHZ 30Q-FCTR 491MA 1812 - Tape and Reel
General Fixed Inductor, IND,POWDERED IRON,10UH,10% TOL,10% -TOL,1812 CASE
|
Vishay Dale
|
| CY7C09289 CY7C09289-9AI CY7C09289-9AC CY7C09389-9A |
32K/64K X 16/18 Synchronous Dual Port Static RAM 32K X 18 DUAL-PORT SRAM, 25 ns, PQFP100
32K/64K X 16/18 Synchronous Dual Port Static RAM 32K X 16 DUAL-PORT SRAM, 20 ns, PQFP100
32K/64K X 16/18 Synchronous Dual Port Static RAM 64K X 16 DUAL-PORT SRAM, 25 ns, PQFP100
32K/64K X 16/18 Synchronous Dual Port Static RAM 32K X 16 DUAL-PORT SRAM, 15 ns, PQFP100
32K/64K X 16/18 Synchronous Dual Port Static RAM 64K X 18 DUAL-PORT SRAM, 20 ns, PQFP100
32K/64K X 16/18 Synchronous Dual Port Static RAM 64K X 16 DUAL-PORT SRAM, 18 ns, PQFP100
DIODE SCHOTTKY SINGLE 75V 200mW 0.45V-vf 150mA-IFM 10mA-IF 5uA-IR SOD-123 3K/REEL 32K X 18 DUAL-PORT SRAM, 18 ns, PQFP100
0.1UF 50V 10% 0805 X7R CERAMIC CAPACITOR 32K X 18 DUAL-PORT SRAM, 20 ns, PQFP100
32K/64K X 16/18 Synchronous Dual Port Static RAM 32K X 16 DUAL-PORT SRAM, 18 ns, PQFP100
(CY7C09279 - CY7C09289) 32K/64K X 16/18 Synchronous Dual Port Static RAM
True dual-ported memory cells which allow simultaneous access of the same memory location
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
CYPRESS[Cypress Semiconductor]
|
| PW-82520N3-100 PW-82521N3-100 PW-82520N3-440 PW-82 |
QTR PWR,L FEAT,30,CERAM JLCC,883C;LEV B(EPLD)
QTR PWR,L FEAT,30NS,CERA JLCC,883C;LEV B(EPLD)
20NS,CERAM JLCC,883C; LEV B COMPLIANT(EPLD)
25NS,CERAMIC JLCC,MIL TEMP(EPLD)
30NS, CERDIP, IND TEMP(EPLD)
12NS, OTP, PLCC, COM TEMP(EPLD)
5V, 20MHZ, PDIP, IND TEMP, GREEN(MCU AVR)
1.8V, 10MHZ, PDIP, IND TEMP, GREEN(MCU AVR)
20NS,CERDIP,883C; LEV B FULLY COMPLIANT(EPLD)
5V, 20MHZ, SOIC, IND TEMP, GREEN(MCU AVR)
STK600 adapter for all SOIC devices(MCU AVR) 工业控制IC
1.8V, 1MHZ, PDIP, IND TEMP(MCU AVR) 工业控制IC
5V, 20 MHZ, MLF, IND TEMP, GREEN(MCU AVR) 工业控制IC
10 MHZ, MLF, IND TEMP, GREEN, 1.8V(MCU AVR) 工业控制IC
Industrial Control IC 工业控制IC
10MHZ, TQFP, IND TEMP, GREEN(MCU AVR) 工业控制IC
5V, 8MHZ, PDIP, COM TEMP(MCU AVR) 工业控制IC
5V, 20MHZ, PDIP, IND TEMP(MCU AVR)
1.8V, 10 MHz, MLF, IND TEMP, GREEN(MCU AVR)
1.8V, 10MHZ, SOIC, IND TEMP, GREEN(MCU AVR)
1.8V, 1MHz, PDIP, IND TEMP, GREEN(MCU AVR)
1.8V, 10MHZ, MLF, IND TEMP, GREEN(MCU AVR)
|
Merrimac Industries, Inc.
Bourns, Inc.
TE Connectivity, Ltd.
Ecliptek, Corp.
Bivar, Inc.
The Connor-Winfield, Corp.
NXP Semiconductors N.V.
Advanced Interconnections, Corp.
Glenair, Inc.
Sumida, Corp.
|
| AS7C256A AS7C256A-10JC AS7C256A-15JCN AS7C256A-15J |
IC,AS7C256A-10TCN,TSOP-28 ASY SRAM,10NS,32K X 8,5V
5V 32K X 8 CMOS SRAM (Common I/O) 32K X 8 STANDARD SRAM, 20 ns, PDSO28
SRAM - 5V Fast Asynchronous
|
ALLIANCE MEMORY INC
Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
|
| PUMA2X0214I-9035 PUMA2X0214I-9045 PUMA2X0214I-9055 |
10MS, DIE, 1.8V, 9 MIL THICKNESS(SERIAL EE)
10MS, 8 SOIC, IND TEMP, GREEN, 1.8V(SERIAL EE)
10MS, 8 TSSOP, IND TEMP, GREEN, 2.7V(SERIAL EE)
10MS, 8 TSSOP, IND TEMP, GREEN, 1.8V(SERIAL EE)
10MS, 8 SOIC, EXT TEMP, 2.7V(SERIAL EE)
10MS, 8 PDIP, IND TEMP, GREEN, 1.8V(SERIAL EE)
SRAM/EPROM 静态存储器/存储
8 ULTRA THIN,MINI MAP,PB/HALO FREE,IND T(SERIAL EE) 静态存储器/存储
10MS, 8 TSSOP, EXT TEMP, GREEN,2.7V(SERIAL EE) 静态存储器/存储
10MS, 8 SOIC, INT TEMP, GREEN, 1.8V(SERIAL EE) 静态存储器/存储
|
Electronic Theatre Controls, Inc.
HIROSE ELECTRIC Co., Ltd.
Maxim Integrated Products, Inc.
|
| BR93L66RFVM-WTR CAT28C64BGI-12T CAT25C32Y14I CAT25 |
EEPROM SRL 256X16 BIT
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一2 KB的EEPROM的国256位每字举办的串行CMOS
EEPROM (4kx8) 32K 2.5-6.0
EEPROM (4kx8) 32K 1.8-6.0
EEPROM (1024x8) 8K
EEPROM 256K X 8 200ns
EEPROM I2C BUS; 4.5 to 5.5V 16Kbit; -40 to 85 C
EEPROM (256x8) 2K 1.8-6.0
EEPROM (512x8) 4k 1.8-6.0
EEPROM 128K X 8 150ns
EEPROM (8kx8) 64K 1.8-6.0
EEPROM (2048x8)(1024x16)16K
EEPROM U 804-29EE0107CWH
EEPROM 64K X 8 70ns
EEPROM (256x8) 2K 2.5-6.0
EEPROM (8kx8) 64K 2.5-6.0
SPI Serial CMOS EEPROM (Motorola Compatible), 32K, 2-bit Block Protection, WPEN Bit, SOIC
SPI Serial CMOS EEPROM (Motorola Compatible), 32K, 2-bit Block Protection, WPEN Bit, TSSOP
EEPROM (384x8) 128k 16
EEPROM SPI 1KBIT
EEPROM SPI 4096X8 BIT
EEPROM SRL 64X16 BIT
EEPROM (256x8) (128x16) 2K
8-Kb I<sup>2</sup>C CMOS Serial EEPROM, SOIC
EEPROM (128x8) 1k 2.5-6.0
EEPROM (8kx8) 64K 5V 90ns
EEPROM (32kx8) 256K 5V 150
EEPROM (32kx8) 256K 5V 120
EEPROM 2kb 1.7-5.5V Ind I2C
EEPROM 512K-Bit CMOS PARA EEPROM
EEPROM (32kx8) 256K 3V 250
EEPROM 64K X 8 512K 5V 150
EEPROM 256K (32KX8)
|
Omron Electronics, LLC
Atmel, Corp.
MITSUMI ELECTRIC CO., LTD.
Intersil, Corp.
Cypress Semiconductor, Corp.
TE Connectivity, Ltd.
Silicon Storage Technology, Inc.
BCD Semiconductor Manufacturing, Ltd.
Belden, Inc.
Rohm Co., Ltd.
Bourns, Inc.
NXP Semiconductors N.V.
Lattice Semiconductor, Corp.
Rectron Semiconductor
SIEMENS AG
Maxim Integrated Products, Inc.
Rochester Electronics, LLC
RF Solutions, Ltd.
Fujitsu, Ltd.
|
|
