| PART |
Description |
Maker |
| LD7126 LD7126SERIES |
DBS-Band, 2.0KW/2.4KW Klystrons for Communications
17 GHz BAND, 2.0 kW/2.4 kW, HIGH EFFICIENCY, HIGH POWER GAIN
17 GHz BAND / 2.0 kW/2.4 kW / HIGH EFFICIENCY / HIGH POWER GAIN
|
NEC[NEC]
NEC Corp.
|
| AD629 AD629A AD629AN AD629AR AD629AR-REEL AD629AR- |
High Common Mode Voltage Difference Amplifier
High Common-Mode Voltage Difference Amplifier OP-AMP, 1000 uV OFFSET-MAX, PDSO8
|
http://
AD[Analog Devices]
Analog Devices, Inc.
ANALOG DEVICES INC
|
| 80CNQ045 80CNQ035 80CNQ040 80CNQSM 80CNQ 80CNQSL 8 |
to 85C, Low Ripple & Noise, High Efficiency up to 82%, Low Profile Plastic Case, Single & Dual Ouputs
SCHOTTKY RECTIFIER
45V 80A Schottky Common Cathode Diode in a D61-8-SM package
45V 80A Schottky Common Cathode Diode in a D61-8-SL package
35V 80A Schottky Common Cathode Diode in a D61-8 package
40V 80A Schottky Common Cathode Diode in a D61-8 package
45V 80A Schottky Common Cathode Diode in a D61-8 package
|
IRF[International Rectifier]
|
| CBTL06GP212EE-G |
High performance DisplayPort switch with high common-mode voltage support
|
NXP Semiconductors
|
| CMPSH05-4C |
SMD Schottky Diode Dual: Common Cathode
SURFACE MOUNT DUAL, COMMON CATHODE HIGH CURRENT, LOW VF SILICON SCHOTTKY DIODE
|
Central Semiconductor Corp
|
| MRF517 |
Small Signal, Up to 1 GHz, Class A, Common Emitter; fO (MHz): 0; fT (MHz): 3000; GNF (dB): 10; VCE (V): 15; IC (mA): 60; NF min (dB): 2.5; Case Style: TO-39 UHF BAND, Si, NPN, RF POWER TRANSISTOR, TO-39
|
Microsemi, Corp.
|
| COM5201T COM5234T COM5216T COM5203T COM5217T COM52 |
300V high efficiency, center-tap rectifier
400V 16A Hi-Rel Ultra-Fast Common Cathode Diode in a TO-257AA package
100V 16A Hi-Rel Ultra-Fast Common Cathode Diode in a TO-257AA package
16 Amp, 50 Volts, High Efficency, Center-Tap Rectifier(16 Amp, 50 V,楂??涓???藉ご寮??娴??)
16 Amp, 150 Volts, High Efficency, Center-Tap Rectifier(16 Amp, 150 V,高效中心抽头式整流器) 16安培50伏特，高效率，中心抽头整流器6安培50伏，高效中心抽头式整流器
200V 16A Hi-Rel Ultra-Fast Common Cathode Diode in a TO-257AA package
600V 16A Hi-Rel Ultra-Fast Common Cathode Diode in a TO-257AA package
16 Amp, 300 Volts, High Efficency, Center-Tap Rectifier(16 Amp, 300 V,楂??涓???藉ご寮??娴??)
150V 16A Hi-Rel Ultra-Fast Common Cathode Diode in a TO-257AA package
|
Omnirel
International Rectifier, Corp.
|
| KTK161 |
FM RF,AM RF,VHF Band Amp.
N CHANNEL JUNCTION FIFLD EFFFCT TRANSISTOR (HIGH FREQUENCY/ VHF BAND AMPLIFIER)
N CHANNEL JUNCTION FIFLD EFFFCT TRANSISTOR (HIGH FREQUENCY, VHF BAND AMPLIFIER) N通道结FIFLD EFFFCT晶体管（高频，甚高频波段放大器）
|
Korea Electronics (KEC)
KEC(Korea Electronics)
KEC Holdings
|
| KTK211 |
FM RF,AM RF,VHF Band Amp.
N CHANNEL JUNCTION FIFLD EFFFCT TRANSISTOR (HIGH FREQUENCY/ VHF BAND AMPLIFIER)
N CHANNEL JUNCTION FIFLD EFFFCT TRANSISTOR (HIGH FREQUENCY, VHF BAND AMPLIFIER) N通道结FIFLD EFFFCT晶体管（高频，甚高频波段放大器）
|
Korea Electronics (KEC)
KEC(Korea Electronics)
KEC Holdings
|
| RF3198SB RF3198PCBA-41X RF3198 |
880 MHz - 915 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
DUAL-BAND GSM900/DCS POWER AMP MODULE
|
RF MICRO DEVICES INC
|
| MS1007 |
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS
HF 2-30 MHz, Class AB, Common Emitter; fO (MHz): 0; P(out) (W): 150; P(in) (W): 6; Gain (dB): 14; Vcc (V): 50; ICQ (A): 100; Case Style: M174 HF BAND, Si, NPN, RF POWER TRANSISTOR
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Microsemi, Corp.
|
| MAX2320 MAX2321 MAX2322 MAX2324 MAX2325 MAX2326 MA |
Adjustable.High-Linearity.SiGe.Dual-Band.LNA/Mixer ICs
Adjustable, High-Linearity, SiGe Dual-Band LNA/Mixer ICs 可调、高线性度、SiGe、双频段、LNA/混频器IC
Adjustable, High-Linearity, SiGe Dual-Band LNA/Mixer ICs RF/MICROWAVE DOWN CONVERTER
Adjustable, High-Linearity, SiGe, Dual-Band, LNA/Mixer ICs
|
Maxim Integrated Products, Inc.
MAXIM INTEGRATED PRODUCTS INC
|
