| PART |
Description |
Maker |
| OP705A OP705B OP705C OP705D |
NPN Photo transistor
|
OPTEK Technologies
|
| MT4700F-GS18 |
Photo Transistor, PHOTO TRANSISTOR DETECTOR, ROHS COMPLIANT, MINIATURE, PLASTIC, SMD, LCC-3
|
Vishay Semiconductors
|
| MEL78 |
NPN SILICON PHOTO TRANSISTOR
|
Micro Electronics
|
| OP755D OP755A OP755B OP755C |
NPN Photo transistor with Base-Emitter Resistor
|
OPTEK[OPTEK Technologies]
|
| TPS626 TPS625 |
TOSHIBA PHOTO DARLINGTON TRANSISTOR SILICON NPN EPITAXIAL PLANAR
|
TOSHIBA[Toshiba Semiconductor]
|
| TPS616 E006914 |
PHOTO TRANSISTOR SILICON NPN EPITAXIAL PLANAR
From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
| BPW96 |
Photo Transistor, PHOTO TRANSISTOR DETECTOR, PLASTIC PACKAGE-2
|
Vishay Semiconductors
|
| 154-22 153-28 154-18 154-04 154-10 154-14 154-12 1 |
TRANSISTOR | BJT | NPN | 220V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 140V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 260V V(BR)CEO | 7.5A I(C)
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 7.5A I(C)
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 240V V(BR)CEO | 7.5A I(C)
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 40V的五（巴西）总裁| 7.5AI（丙）|个STR - 1 / 4
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 60V的五（巴西）总裁| 7.5AI（丙）|个STR - 1 / 4
TRANSISTOR | BJT | NPN | 280V V(BR)CEO | 7.5A I(C) 晶体管|晶体管| npn型| 280伏特五（巴西）总裁| 7.5AI（丙
|
NXP Semiconductors N.V.
Bel Fuse, Inc.
YEONHO Electronics Co., Ltd.
|
| IS3H4 |
The IS3H4 is an optically coupled isolator consisting of two infrared light emitting diodes in inverse parallel and an NPN silicon photo transistor.
|
ISOCOM COMPONENTS
|
