| PART |
Description |
Maker |
| K9F5608U0M- K9F5608U0M-YCB0 K9F5608U0M-YIB0 |
From old datasheet system
EEPROM,NAND FLASH,33MX8,CMOS,TSSOP,48PIN,PLASTIC
32M x 8 Bit NAND Flash Memory
|
Samsung Electronics Inc
SAMSUNG[Samsung semiconductor]
|
| K9F1208Q0A-XXB0 K9F1208Q0B K9F1208Q0A-DIB0 K9F1208 |
64M x 8 bit NAND flash memory, 2.7 - 3.6V
512Mb/256Mb 1.8V NAND Flash Errata
64M x 8 bit NAND flash memory, 1.70 - 1.95V
32M x 16 bit NAND flash memory, 2.7 - 3.6V
32M x 16 bit NAND flash memory, 1.70 - 1.95V
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K9F5608Q0C K9F5608Q0C-D K9F5608Q0C-DCB0 K9F5608Q0C |
32M x 8 Bit NAND Flash Memory
32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
512Mb/256Mb 1.8V NAND Flash Errata
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| AM3064-70/BZC AM3064-50GI175 AM3064-50JC068 AM3090 |
10MS, 8 EIAJ SOIC, IND TEMP, GREEN, 2.7V(BIOS FLASH)
10MS, 8 SOIC, IND TEMP, GREEN, 2.7V(BIOS FLASH)
DIE SALE, 2.7V, 7 MIL(BIOS FLASH)
10MS, 8 SAP, IND, ROHS-B, 2.7V(BIOS FLASH)
8-SOIC,AUTO TEMP,2.7V(SERIAL EE)
10MS, 8 PDIP, IND TEMP, 2.7V(SERIAL EE)
10MS, 8 PDIP, EXT TEMP, GREEN,2.7V(SERIAL EE)
10MS, 8 TSSOP, INT TEMP, GREEN, 1.8V(SERIAL EE)
10MS, 8 PDIP, INT TEMP, GREEN, 2.7V(SERIAL EE)
10MS, DIE 1.8V, 11 MILS THICKNESS(SERIAL EE)
10MS, 8 PDIP, IND TEMP, GREEN, 2.7V(SERIAL EE)
10MS, 8 PDIP, IND TEMP, GREEN,2.7V(SERIAL EE)
8 ULTRA THIN,MINI MAP,PB/HALO FREE,IND T(SERIAL EE) 现场可编程门阵列（FPGA
10MS, 8 SOIC, EXT TEMP, GREEN, 2.7V(SERIAL EE) 现场可编程门阵列（FPGA
Field Programmable Gate Array (FPGA) 现场可编程门阵列（FPGA
10MS, 8 SOIC, INT TEMP, GREEN, 2.7V(SERIAL EE) 现场可编程门阵列（FPGA
10MS, 8 PDIP, EXT TEMP, GREEN, 2.7V(SERIAL EE)
|
Stackpole Electronics, Inc.
Ecliptek, Corp.
Analog Devices, Inc.
Glenair, Inc.
|
| KM29W32000T |
4M x 8 Bit NAND Flash Memory(4M x 8 浣?NAND???瀛???ī
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KM29W8000IT |
1M x 8 Bit NAND Flash Memory(1M x 8 浣?NAND???瀛???ī
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| HY27UF081G2A HY27UF161G2A-TPCS HY27UF161G2A-TPCB |
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
64M X 16 FLASH 3.3V PROM, 25000 ns, PDSO48
|
HYNIX SEMICONDUCTOR INC
|
| K9F2808U0C-VIB0 K9F2808Q0C-DCB0 K9F2808U0C-DCB0 K9 |
16M x 8 Bit / 8M x 16 Bit NAND Flash Memory
16M x 8 Bit , 8M x 16 Bit NAND Flash Memory 1,600 × 8位，8米16位NAND闪存
16M X 8 FLASH 2.7V PROM, 30 ns, PBGA63
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| TC58FVB321XB-70 TC58FVXB-70 TC58FVT321XB-70 TC58FV |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32-MBIT (4M X 8 BITS / 2M X 16 BITS) CMOS FLASH MEMORY 东芝马鞍山数字集成电路硅栅CMOS 32兆位米8 2米16位）的CMOS闪存
32-MBIT (4M 8 BITS / 2M 16 BITS) CMOS FLASH MEMORY
32-MBIT (4Mx8 BITS/2Mx16 BITS) CMOS FLASH MEMORY
|
Toshiba, Corp.
Toshiba Corporation
|
| AN1266 |
BENCHMARKING FLASH NOR AND FLASH NAND MEMORIES
|
SGS Thomson Microelectronics
|
| M54HC423 M54HC423A M54HC423AB1R M54HC423AC1R M54HC |
12-Bit DAC Parallel Voltage Out Pgrmable Int Ref Settling Time, Pwr Consumption, 8-bit uC Comp Int 20-TSSOP -40 to 85 双RETRIGGERABLE单稳态触发器
DUAL RETRIGGERABLE MONOSTABLE MULTIVIBRATOR
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| K9F1608W0A- K9F1608W0A-TCB0 K9F1608W0A-TIB0 K9F1G0 |
-2M x 8 Bit NAND Flash Memory
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
|
