| PART |
Description |
Maker |
| 8485A 8485D Q8486D W8486A R8486A Q8486A R8486D E44 |
8485A Power Sensor, 50 MHz to 26.5 GHz
8485D Diode Power Sensor, 50 MHz to 26.5 GHz
Q8486D Waveguide Power Sensor, 33 GHz to 50 GHz
W8486A Waveguide Power Sensor, 75 GHz to 110 GHz
R8486A Thermocouple Waveguide Power Sensor, 26.5 GHz to 40 GHz
Q8486A Thermocouple Waveguide Power Sensor, 33 GHz to 50 GHz
R8486D Waveguide Power Sensor, 26.5 GHz to 40 GHz
E4412A Wide Dynamic Range Power Sensor, E-Series
E4413A Wide Dynamic Range Power Sensor, E-Series
V8486A V-band Power Sensor, 50 GHz to 75 GHz
8482B High-Power Sensor, 100 kHz to 4.2 GHz, 25W
8487A Power Sensor, 50 MHz to 50 GHz
8482H Power Sensor, 100 kHz to 4.2 GHz, 3 W
8481D Diode Power Sensor, 10 MHz to 18 GHz
|
Agilent (Hewlett-Packard)
|
| IT3015 |
10 GHz high-voltage differential amplifier
|
Iterra
|
| ZSWA-4-30DR |
Circular Connector; Body Material:Aluminum; Series:PT00; No. of Contacts:55; Connector Shell Size:22; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Circular Contact Gender:Pin; Insert Arrangement:22-55
Switch High Isolation, SP4T, 50 DC to 3 GHz
Switch High Isolation, SP4T, 50з DC to 3 GHz
Switch High Isolation/ SP4T/ 50 DC to 3 GHz
|
开
MINI[Mini-Circuits]
|
| TIM1414-2-252 |
HIGH POWER P1dB=33.0 dBm at 13.75 GHz to 14.5 GHz
|
Toshiba Semiconductor
|
| EL0056 |
High Power Limiters 5 GHz to 9 GHz
|
Micronetics, Inc.
|
| EL0094 |
High Power Limiters 4 GHz to 8 GHz
|
Micronetics, Inc.
|
| ES0313-10 |
High Power Switch 0.5 GHz to 4 GHz
|
Micronetics, Inc.
|
| EL0096 |
High Power Limiters 12 GHz to 18 GHz
|
Micronetics, Inc.
|
| EL0095 |
High Power Limiters 8 GHz to 12 GHz
|
Micronetics, Inc.
|
| TSDF1920W |
25-GHz NPN RF transistors
very high power gain;
Very low-noise;
25 GHz Silicon NPN Planar RF Transistor
|
Vishay Intertechnology,Inc.
Vishay Siliconix
|
| 2SC4709 |
NPN Triple Diffused Planar Silicon Transistor High-Voltage Amplifier, High-Voltage Switching Applications
High-Voltage Amplifier/ High-Voltage Switching Applications
|
Sanyo Semicon Device
Toshiba Semiconductor
|
| PE15A1010 |
40 dB Gain, 0.9 dB NF, 14 dBm, 2 GHz to 6 GHz, Low Noise High Gain Amplifier
|
Pasternack Enterprises, Inc.
|
