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IBM0117805 - 2M x 8 11/10 EDO DRAM

IBM0117805_38919.PDF Datasheet


 Full text search : 2M x 8 11/10 EDO DRAM
 Product Description search : 2M x 8 11/10 EDO DRAM


 Related Part Number
PART Description Maker
HYB3165805ATL-60 HYB3165805ATL-50 HYB3165805ATL-40 4M x 16 Bit 4k EDO DRAM Low Power
8M x 8 Bit 4k EDO DRAM
8M x 8 Bit 8k EDO DRAM
8M x 8-Bit Dynamic RAM (4k & 8k Refresh, EDO-Version)
From old datasheet system
Infineon
SIEMENS[Siemens Semiconductor Group]
HYM72V1645GU-60 HYM72V1645GU-50 HYM64V1645GU-60 HY 3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 3.3 16米x 64位江户内.3V6米x 72位江户记忆体模组
3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 16M X 72 EDO DRAM MODULE, 60 ns, DMA168
3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 16M X 64 EDO DRAM MODULE, 60 ns, DMA168
16M x 64 Bit DRAM Module unbuffered
16M x 72 Bit ECC DRAM Module unbuffered
SIEMENS A G
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
HM5113805F-6 HM5113805FLTD-6 HM5113805FTD-6 HM5112 DRAM Chip, EDO DRAM, 16MByte, 3.3V Supply, Commercial, TSOP II, 32-Pin
128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh
Hitachi Semiconductor
HYM72V1005GU-60 HYM72V1005GU-50 HYM64V1005GU-60 HY 1M x 72 Bit ECC DRAM Module unbuffered
1M x 64 Bit DRAM Module unbuffered
From old datasheet system
3.3V 1M x 64-Bit EDO-DRAM Module 3.3V 1M x 72-Bit EDO-DRAM Module 1M X 72 EDO DRAM MODULE, 60 ns, DMA168
3.3V 1M x 64-Bit EDO-DRAM Module 3.3V 1M x 72-Bit EDO-DRAM Module 1M X 64 EDO DRAM MODULE, 60 ns, DMA168
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
AS4C4M4E1-50JC AS4C4M4E1-50TC AS4C4M4E1-50TI AS4C4 4M X 4 EDO DRAM, 60 ns, PDSO24
x4 EDO Page Mode DRAM
ALLIANCE SEMICONDUCTOR CORP
HM5165405F HM5164405F 64 M EDO DRAM (16-Mword ×4-bit)(64M EDO DRAM (16-M×4-)
Hitachi,Ltd.
TC514280BZLL-70 TC5116440BSJ-70 TC5116105BSJ-60 TC 256K X 18 FAST PAGE DRAM, 70 ns, PZIP40 ZIP-40
4M X 4 OTHER DRAM, 70 ns, PDSO26
16M X 1 EDO DRAM, 60 ns, PDSO24
4M X 4 OTHER DRAM, 50 ns, PDSO26
16K X 4 CACHE SRAM, 10 ns, PDIP24
SIEMENS AG
AS4C1M16E5-60TC AS4C1M16E5-50TC AS4C1M16E5-60JC AS DRAM|EDO|1MX16|CMOS|TSOP|50PIN|PLASTIC
DRAM|EDO|1MX16|CMOS|SOJ|42PIN|PLASTIC 内存| EDO公司| 1MX16 |CMOS | SOJ | 42PIN |塑料
1M X 16 EDO DRAM, 50 ns, PDSO44
Amphenol, Corp.
ALLIANCE SEMICONDUCTOR CORP
HYM324025GS-60 HYM324025GS-50 HYM324025S-60 HYM324 4M x 32-Bit EDO-DRAM Module 4M X 32 EDO DRAM MODULE, 60 ns, SMA72
4M x 32-Bit EDO-DRAM Module 4米32位江户记忆体模组
4M x 32-Bit EDO-DRAM Module 4M X 32 EDO DRAM MODULE, 50 ns, SMA72
4M x 32 Bit EDO DRAM Module
INFINEON TECHNOLOGIES AG
SIEMENS A G
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
IBM0116405P IBM0116405B 4M x 4 12/10 EDO DRAM(16M动态RAM(超页面模式读写并带22条地址线,其中12条为行地址选通,10条为列地址选通)) 4米4 120日EDO公司的DRAM,600位动态随机存储器(超页面模式读写并带22条地址线,其中12条为行地址选通,10条为列地址选通)
4M x 4 12/10 EDO DRAM(16M浣??ㄦ?RAM锛??椤甸?妯″?璇诲?骞跺甫22?″???嚎锛??涓?2?′负琛????????10?′负?????????)
IBM Microeletronics
International Business Machines, Corp.
HYB3117805BSJ-50 HYB3117805BSJ-60 HYB5117805BSJ-60 2M x 8 Bit 2k 5 V 60 ns EDO DRAM
2M x 8 Bit 2k 3.3 V 60 ns EDO DRAM
-2M x 8 - Bit Dynamic RAM 2k Refresh
2M x 8-Bit Dynamic RAM 2k Refresh (Hyper Page Mode-EDO)
From old datasheet system
Infineon
SIEMENS[Siemens Semiconductor Group]
MSM51V4265 MSM51V4265E MSM51V4265E-70TS-K 256K X 16 EDO DRAM, 70 ns, PDSO40
DRAM / FAST PAGE MODE TYPE
262,144-Word 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO
LAPIS SEMICONDUCTOR CO LTD
OKI electronic componets
 
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