| PART |
Description |
Maker |
| 391KD14NX 361KD14NX 271KD14NX 471KD14NX 331KD14NX |
7 to 1000 Volts Varistor 4.2 to 336.0 Joule 7日至1000伏特，压敏电阻器4.2 336.0焦
|
Micro Commercial Components Corp.
Micro Commercial Components, Corp.
|
| HER507 HER504 HER505 HER508 HER502 HER503 HER501 H |
5.0 Amp High Efficient Rectiffiers 50 to 1000 Volts 5 A, 1000 V, SILICON, RECTIFIER DIODE, DO-201AD
|
Micro Commercial Components, Corp.
MCC[Micro Commercial Components]
|
| RGP20B RGP20G RGP20J RGP20K RGP20M RGP20A RGP20D |
2.0 Amp Glass Passivated Junction Fast Recovery Rectifiers 50 to 1000 Volts 2 A, 1000 V, SILICON, RECTIFIER DIODE, DO-201AE
|
Micro Commercial Compon...
MCC[Micro Commercial Components]
Micro Commercial Components, Corp.
|
| SPD5614 SPD56142 SPD5622SM SPD5618 SPD5618SMS R000 |
1 AMP 200 Α 1000 VOLTS STANDARD RECOVERY RECTIFIER 1 A, 1000 V, SILICON, SIGNAL DIODE
1 AMP 200 ? 1000 VOLTS STANDARD RECOVERY RECTIFIER
|
http://
Solid State Devices, Inc.
SOLID STATE DEVICES INC
Solid States Devices, I...
|
| MTY14N100E_D ON2710 MTY14N100E MTY14N100 MTY14N100 |
TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM TMOS14安培，功率场效应晶体000伏特的RDS（on）\u003d 0.80欧姆
TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM 14 A, 1000 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
From old datasheet system
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement Mode Silicon Gate
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
| 10A015 |
1.5 W, 20 V, 1000 MHz common emitter transistor
1.5 Watts, 20 Volts, Class A Linear to 1000 MHz
|
GHZTECH[GHz Technology]
|
| CS241020 |
Fast Recovery Single Diode Module 200 Amperes/1000 Volts 200 A, 1000 V, SILICON, RECTIFIER DIODE
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
| 0510-50A |
50 W, 28 V, 500-1000 MHz common emitter transistor
50 Watts, 28 Volts, Class AB Defcom 500 - 1000 MHz
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3.7A I(C) | SOT-324VAR
晶体管|晶体管|叩| 60V的五（巴西）总裁| 3.7AI（丙）|的SOT - 324VAR
500-1000 MHz, Class AB, Common Emitter; fO (MHz): 1000; P(out) (W): 50; P(in) (W): 10; Gain (dB): 7; Vcc (V): 28; ICQ (A): 0.1; Case Style: 55AV-2
|
GHZTECH[GHz Technology]
MICROSEMI POWER PRODUCTS GROUP
|
| SPD55501 SPD5554SMSS SPD5554SMSTX SPD5554SMSTXV SP |
5 AMPS, 200 thru 1000 VOLTS 2 レsec STANDARD RECOVERY RECTIFIER 5 A, 1000 V, SILICON, RECTIFIER DIODE
5 AMPS, 200 thru 1000 VOLTS 2 レsec STANDARD RECOVERY RECTIFIER 1.3 A, 1000 V, SILICON, RECTIFIER DIODE
|
Solid States Devices, Inc
Solid State Devices, Inc.
|
| FR154GP FR157GP FR153GP FR152GP FR155GP FR151GP FR |
1.5 Amp Glass Passivated Fast Recovery Rectifier 50 to 1000 Volts 1.5 A, 1000 V, SILICON, RECTIFIER DIODE, DO-15
1.5 Amp Glass Passivated Fast Recovery Rectifier 50 to 1000 Volts 1.5 A, 400 V, SILICON, RECTIFIER DIODE, DO-15
|
Micro Commercial Components, Corp.
MCC[Micro Commercial Components]
|
