| PART |
Description |
Maker |
| PS22054 |
1200V/15A low-loss 4th generation IGBT inverter bridge for 3 phase DC-to-AC power conversion
|
Mitsubishi Electric Semiconductor
|
| PS21353-N |
DIP - IPM
600V/10A low-loss 4th generation (planar) IGBT inverter bridge for 3 phase DC-to-AC power conversion.
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| PQ5TS1 PQ5TS1-SERIES |
0.15A Output / Surface Mount Type Low Power-Loss Voltage Regulators
0.15A Output, Surface Mount Type Low Power-Loss Voltage Regulators
Low Power Loss Voltage Regulator
|
SHARP[Sharp Electrionic Components]
|
| PS21964-4S |
600V/15A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion
|
Mitsubishi Electric Semiconductor
|
| RURP15120 |
15A, 1200V Ultrafast Diode
|
Fairchild Semiconductor
|
| FGA15N120FTD |
1200V, 15A Field Stop Trench IGBT
|
Fairchild Semiconductor
|
| 6MBP15VAA120-50 |
IGBT MODULE (V series) 1200V / 15A / IPM
|
Fuji Electric
|
| FGW15N120VD |
Discrete IGBT (High-Speed V series) 1200V / 15A
|
Fuji Electric
|
| HFA35HB120C |
1200V 15A Hi-Rel Ultra-Fast Common Cathode Diode in a TO-254AA package 120015A条，高可靠性超快速共阴极二极管采用TO - 254AA封装
|
International Rectifier
Sanyo Electric Co., Ltd.
|
| APT12031JLL |
POWER MOS 7 1200V 30A 0.310 Ohm
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
|
Advanced Power Technology Ltd.
|
| APT12040L2LL |
POWER MOS 7 1200V 30A 0.400 Ohm
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS
|
Advanced Power Technology Ltd.
|
