| PART |
Description |
Maker |
| X28HC256PI X28HC256DI-15C7871 |
256K, 32K x 8 Bit; 5 Volt, Byte Alterable EEPROM; Temperature Range: -40°C to 85°C; Package: 28-PDIP 32K X 8 EEPROM 5V, PDIP28
256K, 32K x 8 Bit; 5 Volt, Byte Alterable EEPROM; Temperature Range: -40°C to 85°C; Package: 28-CerDIP 32K X 8 EEPROM 5V, 150 ns, PDSO28
|
Intersil, Corp.
|
| AT28BV256-20PI AT28BV256-20PU AT28BV256-20JI AT28B |
200NS, SOIC, IND TEMP(EEPROM) 32K X 8 EEPROM 3V, 200 ns, PDSO28
256K (32K x 8) Battery-Voltage Parallel EEPROMs
|
Atmel, Corp.
ATMEL Corporation
|
| CAT28C256NA-15T CAT28C256NA-12T CAT28C256NI-15T CA |
256K-Bit Parallel EEPROM
256 kb Parallel EEPROM 32K X 8 EEPROM 5V, 120 ns, PQCC32
|
http://
ON Semiconductor
|
| 28C256TRT4FS-15 28C256T 28C256TRPDB-12 28C256TRPDB |
256K EEPROM (32K x 8-Bit) EEPROM
|
MAXWELL[Maxwell Technologies]
|
| MX27C256 MX27C256PC-10 MX27C256PC-12 MX27C256PC-15 |
256K-BIT [32K x 8] CMOS EPROM 32K X 8 OTPROM, 55 ns, PDSO28
256K-BIT [32K x 8] CMOS EPROM 32K X 8 OTPROM, 70 ns, PQCC32
256K-BIT [32K x 8] CMOS EPROM 32K X 8 OTPROM, 70 ns, PDIP28
256K-BIT [32K x 8] CMOS EPROM 32K X 8 OTPROM, 100 ns, PDIP28
256K-BIT [32K x 8] CMOS EPROM 32K X 8 OTPROM, 120 ns, PDIP28
256K-BIT [32K x 8] CMOS EPROM 32K X 8 OTPROM, 150 ns, PDIP28
256K-BIT [32K x 8] CMOS EPROM 32K X 8 OTPROM, 90 ns, PDIP28
256K-BIT [32K x 8] CMOS EPROM 32K X 8 OTPROM, 55 ns, PDIP28
|
PROM
Macronix International Co., Ltd.
|
| 28LV256SI-3 28LV256SI-4 28LV256SI-5 28LV256SI-6 28 |
Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns.
|
Turbo IC
|
| 74LVC377D-T 74LVC377PW-T |
1 MHZ 256K I2C SERIAL EEPROM, -40C to 85C, 8-MSOP, T/R 八路D类触发器
256K, 32K X 8, 2.5V SER EE, -40C to 85C, 8-SOIC 208mil, T/R 八路D类触发器
|
CEC Industries, Ltd.
|
| M28256-15WKA1 M28256-90BS6 M28256-25BS1 |
32K X 8 EEPROM 3V, 150 ns, PQCC32
32K X 8 EEPROM 5V, 90 ns, PDIP28
32K X 8 EEPROM 5V, 250 ns, PDIP28
|
STMICROELECTRONICS
|
| LH53259 LH53259D LH53259N LH53259T |
CMOS 256K(32K X 8) Mask-Programmable ROM
CMOS 256K (32K x 8) MROM
|
SHARP[Sharp Electrionic Components]
Sharp Corporation
|
| 27C256 27C256-10 27C256-10EL 27C256-10EP 27C256-10 |
256K (32K x 8) CMOS EPROM
256K (32K x 8) CMOS EPROM 256K2K的8）的CMOS存储
DIODE SCHOTTKY 150V 60A TO247AC
CAPACITOR 1500UF 80V ELECT TSHA
CAP 270UF 400V ELECT TS-ED
From old datasheet system
256K (32x8) CMOS EPROM
|
YEONHO Electronics Co., Ltd.
Microchip Technology, Inc.
Microchip Technology Inc.
MICROCHIP[Microchip Technology]
|
| CAT28LV256NI-20T CAT28LV256NI-25T CAT28LV256_04 CA |
256K-Bit CMOS PARALLEL E2PROM
32K X 8 EEPROM 3V, 300 ns, PDSO28
|
http://
CATALYST[Catalyst Semiconductor]
ON SEMICONDUCTOR
|
