PART |
Description |
Maker |
3DD2103 3DD2103-O-A-N-D |
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD2103 FOR LOW FREQUENCY
|
JILIN SINO-MICROELECTRONICS CO., LTD.
|
3DD5024A 3DD5024A-O-HF-N-B |
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5024A FOR LOW FREQUENCY
|
JILIN SINO-MICROELECTRONICS CO., LTD.
|
3DD5010A-O-A-N-D 3DD5310A |
CASE-RATED BIPOLAR TRANSISTOR 3DD5310 FOR LOW FREQUENCY AMPLIFICATION
|
JILIN SINO-MICROELECTRONICS CO., LTD.
|
3DD5031 3DD5031-O-A-N-D 3DD5031-Y-O-A-B-D |
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5031 FOR LOW FREQUENCY
|
JILIN SINO-MICROELECTRONICS CO., LTD.
|
3DD2109 3DD2109-O-A-N-D |
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD2109 FOR LOW FREQUENCY
|
JILIN SINO-MICROELECTRONICS CO., LTD.
|
IRG4RC10KPBF |
INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT
|
International Rectifier
|
IRGR3B60KD2 IRGR3B60KD2PBF |
600V Non Punch Through, Short Circuit Rated IGBT in a D-Pak package. INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
|
International Rectifier
|
TC74HC123AF TC74HC123AFN TC74HC123AP HC123 |
Bipolar Transistor; Package/Case:TO-126; Current Rating:500mA; Voltage Rating:300V DUAL RETRIGGERABLE MONOSTABLE MULTIVIBRATOR
|
Toshiba Corporation TOSHIBA[Toshiba Semiconductor] http://
|
IRFV360 |
400V Single N-Channel Hi-Rel MOSFET in a TO-258AA package REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR
|
IRF[International Rectifier]
|
BUZ102S Q67040-S4011-A2 |
High Speed CMOS Logic 12-Stage Binary Counter 16-SOIC -55 to 125 SIPMOS功率晶体管(N通道增强模式雪崩额定dv / dt的评价) SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated) SIPMOS ? Power Transistor
|
SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|