| PART |
Description |
Maker |
| DSB5712 1N5711 1N5711-1 1N5712-1 1N6857-1 1N6858-1 |
0.075 A, SILICON, SIGNAL DIODE, DO-35
SCHOTTKY BARRIER DIODES
|
MICROSEMI[Microsemi Corporation]
|
| WE128K32-XH1X WE128K32-XG2TX WE128K32NP-200H1Q WE1 |
EEPROM MCP
128K X 32 EEPROM 5V MODULE, 200 ns, CPGA66 1.075 X 1.075 INCH, HERMETIC SEALED, CERAMIC, HIP-66
128K X 32 EEPROM 5V MODULE, 120 ns, CPGA66 1.075 x 1.075 INCH, HERMETIC SEALED, CERAMIC, HIP-66
128K X 32 EEPROM 5V MODULE, 150 ns, CPGA66 1.075 X 1.075 INCH, HERMETIC SEALED, CERAMIC, HIP-66
128K X 32 EEPROM 5V MODULE, 140 ns, CPGA66 1.075 X 1.075 INCH, HERMETIC SEALED, CERAMIC, HIP-66
128K X 32 EEPROM 5V MODULE, 250 ns, CPGA66 1.075 X 1.075 INCH, HERMETIC SEALED, CERAMIC, HIP-66
|
Microsemi, Corp.
White Electronic Designs, Corp.
|
| 1SS361UDJ 1SS361UDJ-7 1SS361UDJ-15 |
Discrete - Diodes (Less than 0.5A) - Switching Diodes
DUAL SURFACE MOUNT SWITCHING DIODE
|
Diodes Incorporated
|
| MA2C185 MA185 |
Small-signal device - Diodes - Swicthing Diodes
From old datasheet system
DO-34-A1
Switching Diodes
|
Matsshita / Panasonic
|
| MA6X126 |
Small-signal device - Diodes - Swicthing Diodes
From old datasheet system
Switching Diodes
|
Matsshita / Panasonic
|
| BAV5004W BAV5004W-7 BAV5004W-15 |
HIGH VOLTAGE SWITCHING DIODE
Discrete - Diodes (Less than 0.5A) - Switching Diodes
|
Diodes Incorporated
|
| CDSH3-21-G CDSH3-21-G12 |
Switching Diodes Array, V-RRM=200V, V-R=200V, P-D=150mW, I-F=200mA
Small Signal Switching Diodes
|
Comchip Technology
|
| CDSV6-99SD-G |
Switching Diodes Array, V-RRM=75V, V-R=75V, P-D=200mW, I-F=215mA
Small Signal Switching Diodes
|
Comchip Technology
|
| 1SS390 |
Diodes > High Frequency Diodes > Band switching diodes
|
Rohm
|
| CDSH3-4448C CDSH3-4448A CDSH3-4448S-G CDSH3-4448-G |
Switching Diodes Array, V-RRM=80V, V-R=80V, P-D=150mW, I-F=250mA
SMD Switching Diodes
|
Comchip Technology
|
|
