PART |
Description |
Maker |
6N60L-BTA3-R 6N60-BTA3-R 6N60L-BTA3-T 6N60-BTA3-T |
6.2 Amps, 600/650 Volts N-CHANNEL MOSFET 六点二安培,600/650伏特N通道MOSFET
|
Unisonic Technologies Co., Ltd. 友顺科技股份有限公司
|
CM50DY-12H |
Dual IGBTMOD 50 Amperes/600 Volts 50 A, 600 V, N-CHANNEL IGBT
|
Powerex, Inc. POWEREX[Powerex Power Semiconductors]
|
STW21NM60ND STB21NM60ND09 STP21NM60ND STI21NM60ND |
N-channel 600 V, 0.17 Ω, 17 A FDmesh II Power MOSFET D2PAK, I2PAK, TO-220FP, TO-220, TO-247 17 A, 600 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Low input capacitance and gate charge
|
STMicroelectronics
|
CM100TJ-12F |
128 x 64 pixel format, LED or EL Backlight available 100 A, 600 V, N-CHANNEL IGBT Trench Gate Design 100 Amperes/600 Volts
|
Powerex, Inc. POWEREX[Powerex Power Semiconductors]
|
CM150TU-12H |
240 x 128 pixel format, CFL Backlight with power harness 150 A, 600 V, N-CHANNEL IGBT Six IGBTMOD 150 Amperes/600 Volts
|
Powerex, Inc. POWEREX[Powerex Power Semiconductors]
|
CM150DY-12H |
Dual IGBTMOD 150 Amperes/600 Volts 150 A, 600 V, N-CHANNEL IGBT
|
Powerex Power Semicondu... Powerex Power Semiconductors Powerex, Inc.
|
FCPF600N60Z |
N-Channel SuperFETII MOSFET 600 V, 7.4 A, 600 m N-Channel SuperFET? II MOSFET
|
Fairchild Semiconductor
|
STGW30NC60KD |
60 A, 600 V, N-CHANNEL IGBT, TO-247 30 A - 600 V - short circuit rugged IGBT
|
STMicroelectronics
|
APT50GT60BR APT50GT60SRG APT50GT60BRG |
Thunderbolt IGBT Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: TO-247 [B]; BV(CES) (V): 600; VCE(sat) (V): 2; IC (A): 52; 110 A, 600 V, N-CHANNEL IGBT, TO-247AD
|
Microsemi Corporation http:// Microsemi, Corp.
|
STD8NM60N STD8NM60N-1 STF8NM60N STB8NM60N STP8NM60 |
N-channel 600 V, 0.56 Ω,7 A MDmesh?/a> II Power MOSFET TO-220, TO-220FP, IPAK, DPAK, D2PAK N-channel 600 V, 0.56 Ω,7 A MDmesh II Power MOSFET TO-220, TO-220FP, IPAK, DPAK, D2PAK 7 A, 600 V, 0.65 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB N-channel 600 V, 0.56 Ω,7 A MDmesh?II Power MOSFET TO-220, TO-220FP, IPAK, DPAK, D2PAK
|
STMicroelectronics
|
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