| PART |
Description |
Maker |
| CM75DU-12H |
Dual IGBTMOD 75 Amperes/600 Volts 75 A, 600 V, N-CHANNEL IGBT
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
| STW21NM60ND STB21NM60ND09 STP21NM60ND STI21NM60ND |
N-channel 600 V, 0.17 Ω, 17 A FDmesh II Power MOSFET D2PAK, I2PAK, TO-220FP, TO-220, TO-247
17 A, 600 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Low input capacitance and gate charge
|
STMicroelectronics
|
| IRG4PC50F IRG4PC50F-E |
70 A, 600 V, N-CHANNEL IGBT, TO-247AC
70 A, 600 V, N-CHANNEL IGBT, TO-247AD
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.45V, @Vge=15V, Ic=39A)
600V Fast 1-8 kHz Discrete IGBT in a TO-247AC package
|
IRF[International Rectifier]
|
| STP25NM60N STW25NM60N STB25NM60N STF25NM60N STB25N |
20 A, 600 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
20 A, 600 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC
N-channel 600 V, 0.130 Ω , 21 A, MDmesh II Power MOSFET TO-220, TO-220FP, I2PAK, D2PAK, TO-247
N-channel 600 V, 0.130 Ω , 21 A, MDmesh?/a> II Power MOSFET TO-220, TO-220FP, I2PAK, D2PAK, TO-247
|
http://
STMicroelectronics
|
| MGP11N60ED_D ON1850 MGP11N60ED ON1849 |
IGBT IN TO-220 11 A @ 90C15 A @ 25C 600 VOLTS
From old datasheet system
SHORT CIRCUIT RATED LOW ON-VOLTAGE 15 A, 600 V, N-CHANNEL IGBT, TO-220AB
|
ON Semiconductor
|
| CM150DY-12H |
Dual IGBTMOD 150 Amperes/600 Volts 150 A, 600 V, N-CHANNEL IGBT
|
Powerex Power Semicondu...
Powerex Power Semiconductors
Powerex, Inc.
|
| IXSQ10N60B2D1 IXSH10N60B2D1 |
20 A, 600 V, N-CHANNEL IGBT TO-3P, 3 PIN
20 A, 600 V, N-CHANNEL IGBT, TO-247AD
|
IXYS, Corp.
IXYS CORP
|
| STF2LN60K3 STD2LN60K3 STU2LN60K3 |
N-channel 600 V, 4 Ohm typ., 2 A, SuperMESH3(TM) Power MOSFET in DPAK package
N-channel 600 V, 4typ., 2 A SuperMESH3 Power MOSFET in DPAK, TO-220FP and IPAK packages
|
ST Microelectronics
STMicroelectronics
|
| APT40N60B2CFG APT40N60B2CF APT40N60LCF APT40N60LCF |
40 A, 600 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
Super Junction FREDFET 40 A, 600 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET
|
MICROSEMI POWER PRODUCTS GROUP
Microsemi, Corp.
Advanced Power Technology
|
| MTP1N60E |
TMOS POWER FET 1.0 AMPERES 600 VOLTS RDS(on) = 8.0 OHM 1 A, 600 V, 8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Motorola Mobility Holdings, Inc.
Motorola, Inc
|
| IXSH24N60B IXST24N60BD1 IXSH24N60BD1 |
48 A, 600 V, N-CHANNEL IGBT, TO-247AD TO-247AD, 3 PIN
48 A, 600 V, N-CHANNEL IGBT, TO-268AA TO-268, 3 PIN
High Speed IGBT
|
IXYS Corporation
IXYS, Corp.
|
| STD8NM60N STD8NM60N-1 STF8NM60N STB8NM60N STP8NM60 |
N-channel 600 V, 0.56 Ω,7 A MDmesh?/a> II Power MOSFET TO-220, TO-220FP, IPAK, DPAK, D2PAK
N-channel 600 V, 0.56 Ω,7 A MDmesh II Power MOSFET TO-220, TO-220FP, IPAK, DPAK, D2PAK
7 A, 600 V, 0.65 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
N-channel 600 V, 0.56 Ω,7 A MDmesh?II Power MOSFET TO-220, TO-220FP, IPAK, DPAK, D2PAK
|
STMicroelectronics
|
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