PART |
Description |
Maker |
SPP06N60C3 SPP06N60C307 |
CoolMOSTM Power Transistor Features New revolutionary high voltage technology
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Infineon Technologies AG
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SPA11N60C3E8185 SPP11N60C3 SPI11N60C3 SPP11N60C309 |
Cool MOS Power Transistor Feature New revolutionary high voltage technology Cool MOS?/a> Power Transistor Feature New revolutionary high voltage technology
|
Infineon Technologies AG http://
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SPI07N60S5 SPP07N60S509 |
Cool MOS Power Transistor Feature New revolutionary high voltage technology
|
Infineon Technologies AG
|
SPP11N65C3 SPA11N65C3 SPI11N65C3 SPP11N65C309 |
Cool MOS Power Transistor Feature New revolutionary high voltage technology
|
Infineon Technologies AG
|
SPP20N60CFD09 |
Cool MOS Power Transistor Feature New revolutionary high voltage technology Cool MOS?/a> Power Transistor Feature New revolutionary high voltage technology
|
Infineon Technologies AG
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SPS02N60C3 SPS02N60C309 |
Cool MOS Power Transistor Feature new revolutionary high voltage technology
|
Infineon Technologies AG
|
SPN01N60C3 SPN01N60C305 |
New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated
|
Infineon Technologies AG
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SPP04N60C3 SPA04N60C3 SPP04N60C309 |
New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated
|
Infineon Technologies AG
|
SPP11N65C3 SPA11N65C3 SPI11N65C3 SPP11N65C307 |
New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated
|
Infineon Technologies AG
|
SPI07N65C3 SPA07N65C3 SPP07N65C309 |
New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated
|
Infineon Technologies AG
|
IPB60R120C7 |
CoolMOS?C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies.
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Infineon Technologies A...
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