| PART |
Description |
Maker |
| MMDT2907A |
PNP Silicon Multi-Chip Transistor
|
SeCoS Halbleitertechnologie GmbH
|
| TPC6902 |
Multi-Chip Transistor Silicon NPN / PNP Epitaxial Type
|
Toshiba Semiconductor
|
| BC847PN |
Multi-Chip Transistor
|
SeCoS Halbleitertechnologie GmbH
|
| SSM5H11TU |
Silicon N Channel MOS Type (U-MOS3)/Silicon Epitaxial Schottky Barrier Diode
Multi-chip discrete device (N-ch SBD)
|
Toshiba Semiconductor
|
| UMH9N |
NPN Multi-Chip Built-in Resistors Transistor
|
SeCoS Halbleitertechnologie GmbH
|
| 2N2901 |
NPN MULTI-CHIP COMPOSITE TRANSISTOR PAIR
|
New Jersey Semi-Conductor Products, Inc.
|
| CMLM0605 CMLM0605BK |
200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR
SMD Module PNP Low VCE(SAT) & Low VF Schottky Diode
MULTI DISCRETE MODULE⑩ SURFACE MOUNT LOW VCE (SAT) SILICON PNP TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE
MULTI DISCRETE MODULE??SURFACE MOUNT LOW VCE (SAT) SILICON PNP TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE
MULTI DISCRETE MODULE?/a> SURFACE MOUNT LOW VCE (SAT) SILICON PNP TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE
|
CENTRAL[Central Semiconductor Corp]
|
| TPCP8J0107 |
TOSHIBA Multi-chip Device Silicon P Channel MOS Type (U-MOSIV) /Silicon NPN Epitaxial Type
|
Toshiba Semiconductor
|
| TH50VSF3582AASB TH50VSF3583AASB |
TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS
|
TOSHIBA[Toshiba Semiconductor]
|
| BUX20 |
SILICON MULTI-EPITAXIAL NPN TRANSISTOR
|
Seme LAB
|
