| PART |
Description |
Maker |
| B39192B5104U410 |
GSM 1900
|
EPCOS
|
| CXM3000GA |
Wireless Gsm900/1800/1900 Dual/triple Band Rx/tx Gsm/gprs Transceiver Module
|
Sony Electronics
|
| FW90SMAM |
Penta-band Cellular 2G/3G GSM/CDMA/UMTS Flexible Whip Monopole Antenna 850/900/1800/1900/2100 MHz
|
List of Unclassifed Man...
|
| MRF18085B |
MRF18085B, MRF18085BR3, MRF18085BLSR3 GSM/GSM EDGE 1.9-1.99 GHz, 85 W, 26 V Lateral N-Channel RF Power MOSFETs
|
Motorola
|
| MRF5S9101NBR1 MRF5S9101NR1 |
GSM/GSM EDGE LATERAL N-CHANNEL RF POWER MOSFETs
|
Freescale Semiconductor
|
| MW4IC915MBR1 MW4IC915GMBR1 MW4IC915 |
MW4IC915MBR1. MW4IC915GMBR1 GSM/GSM EDGE. N-CDMA. W-CDMA. 860-960 MHz. 15 W. 26 V RF LDMOS Wideband Integrated Power Amplifiers MW4IC915MBR1MW4IC915GMBR1的GSM / GSM的EDGE网络 - CDMA技术。的W - CDMA860-960兆赫15日布什26最小输LDMOS的宽带集成功率放大器
|
飞思卡尔半导体(中国)有限公司
MOTOROLA[Motorola, Inc]
|
| MRF18085AR3 MRF18085ALSR3 |
RF Power Field Effect Transistors
GSM/GSM EDGE 1.80–1.88 GHz, 85 W, 26 V Lateral N–Channel RF Power MOSFET
|
Motorola, Inc.
MOTOROLA[Motorola Inc]
Freescale (Motorola)
|
| MRF18085A MRF18085AR3 MRF18085ALSR3 |
The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs
MRF18085A, MRF18085AR3, MRF18085ALSR3 GSM/GSM EDGE, 1.8-1.88 GHz, 85 W, 26 V Lateral N-Channel RF Power MOSFETs
|
http://
MOTOROLA[Motorola, Inc]
|
| ZN2PD-1900 |
Power Splitter/Combiner 2 Way-0 50楼? 1600 to 1900 MHz
Power Splitter/Combiner 2 Way-0 50Ω 1600 to 1900 MHz
Power Splitter/Combiner 2 Way-0 50Ω 1600 to 1900 MHz
|
Mini-Circuits
|
| AD1900-11TO |
? 1900 μm active area
|
Sensortechnics GmbH
|
| SAWFD1G90LA0F00 |
1 FUNCTIONS, 1900 MHz, SAW FILTER
|
MURATA MANUFACTURING CO LTD
|
