| PART |
Description |
Maker |
| IXBH6N170 IXBT6N170 |
High Voltage, High Gain BIMOSFET?/a> Monolithic Bipolar MOS Transistor
High Voltage, High Gain BIMOSFET⑩ Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
| IXBH12N300 |
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
| ECN3067 ECN3067SLV ECN3067SLR |
HIGH-VOLTAGE MONOLITHIC IC
|
Hitachi,Ltd.
Hitachi Semiconductor
|
| ECN3021 |
High Voltage Monolithic IC
|
Hitachi
|
| ECN3061 |
High Voltage Monolithic IC
|
Renesas Technology
|
| ECN3064 ECN3064SP ECN3064SPR ECN3064SPV |
HIGH-VOLTAGE MONOLITHIC IC 高压单片集成电路
|
Hitachi,Ltd.
Hitachi Semiconductor
|
| TPD4105AK07 |
High Voltage Monolithic Silicon Power IC
|
Toshiba Semiconductor
|
| TPD4104AK |
High Voltage Monolithic Silicon Power IC
|
Toshiba Semiconductor
|
| LT3512HMSTRPBF |
Monolithic High Voltage Isolated Flyback Converter
|
Linear Technology
|
| IXBH5N160G IXBP5N160G |
High Voltage BIMOSFETTM
Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
| NCP105006 |
Monolithic High Voltage Gated Oscillator Power Switching Regulator
|
ON Semiconductor
|
