PART |
Description |
Maker |
BR24L08FVM-W BR24L08FJ-W BR24L08FV-W BR24L08F-W BR |
10248 bit electrically erasable PROM 1024】8 bit electrically erasable PROM
|
ROHM[Rohm]
|
27C4096 W27C4096 W27C4096-12 W27C4096P-15 W27C4096 |
256K X 16 ELECTRICALLY ERASABLE EPROM 256K ′ 16 ELECTRICALLY ERASABLE EPROM From old datasheet system
|
Winbond Electronics WINBOND[Winbond]
|
IS93C46D IS93C46D-2ZI IS93C46D-2GI IS93C46D-2GLI I |
1-KBIT SERIAL ELECTRICALLY ERASABLE PROM 64 X 16 MICROWIRE BUS SERIAL EEPROM, PDIP8 1-KBIT SERIAL ELECTRICALLY ERASABLE PROM 64 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8 1-KBIT SERIAL ELECTRICALLY ERASABLE PROM 1千位的电可擦除可编程ROM
|
Integrated Silicon Solution, Inc.
|
24C64 TU24C64CP2 TU24C64CP3 TU24C64CS2 TU24C64CS3 |
CMOSIC2-WIREBUS64KELECTRICALLYERASABLEPROGRAMMABLEROM8KX8BITEEPROM From old datasheet system CMOS I?C 2-WIRE BUS 64K ELECTRICALLY ERASABLE PROGRAMMABLE ROM 8K X 8 BIT EEPROM CMOS I2C 2-WIRE BUS 64K ELECTRICALLY ERASABLE PROGRAMMABLE ROM 8K X 8 BIT EEPROM
|
Electronic Theatre Controls, Inc. ETC[ETC] List of Unclassifed Manufacturers
|
PA7540P-15 PA7540PI-15 PA7540S-15 PA7540SI-15 PA75 |
PA7540 PEEL Array Programmable Electrically Erasable Logic Array PA7540 PEEL Array? Programmable Electrically Erasable Logic Array PA7540 PEEL Array Programmable Electrically Erasable Logic Array
|
http:// ETC ANACHIP[Anachip Corp]
|
28C256ASC-1 28C256ASC-2 28C256ASC-3 28C256ASC-4 28 |
High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM High speed 200 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
|
Turbo IC
|
SC22201 SC22201CN SC22101CN SC22201CM SC22101 |
Electrically Erasable Programmable Memories
|
List of Unclassifed Manufacturers Sierra ETC[ETC]
|
ATF22LV10CQZ-30PC ATF22LV10CQZ-30JI ATF22LV10CQZ-3 |
Electrically-Erasable PLD 电可擦除可编程逻辑器件
|
Atmel, Corp.
|
W27C010 |
128K X 8 ELECTRICALLY ERASABLE EPROM
|
Winbond
|
GAL22LV10C-7LJ GAL22LV10D-5LJ |
Electrically-Erasable PLD 电可擦除可编程逻辑器件
|
Lattice Semiconductor, Corp.
|
GAL20RA10-20VI GAL20RA10-25VC GAL20RA10-20NI |
Electrically-Erasable PLD 电可擦除可编程逻辑器件
|
Lattice Semiconductor, Corp.
|
LVT16V8-6A LVT16V8-6DB |
Electrically-Erasable PLD 电可擦除可编程逻辑器件
|
NXP Semiconductors N.V.
|