| PART |
Description |
Maker |
| STS7103 |
Infrared LED, 3.9 mm, 1 ELEMENT, INFRARED LED, 950 nm, HERMETIC SEALED, TO-18, 2 PIN
|
Vishay Semiconductors
|
| AA3528AF3C |
2.4 mm, 1 ELEMENT, INFRARED LED, 940 nm
3.5x2.8 mm INFRARED EMITTING DIODE
|
Kingbright Corporation
|
| MLED930 |
Infrared LED 3.68 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
Motorola, Inc
Motorola Mobility Holdings, Inc.
|
| QEB421 QEB421TR |
SURFACE MOUNT INFRARED LIGHT EMITTING DIODE
SURFACE MOUNT INFRARED 2.4 mm, 1 ELEMENT, INFRARED LED, 880 nm
|
FAIRCHILD[Fairchild Semiconductor]
Lite-On Technology, Corp.
|
| LED55CB |
GaAs Infrared Emitting Diode; Package: TO-46; No of Pins: 2; Container: Bulk 1 ELEMENT, INFRARED LED, 940 nm
|
Fairchild Semiconductor, Corp.
|
| OED-EL-1L2 |
5 mm, 1 ELEMENT, INFRARED LED, 940 nm LEAD FREE PACKAGE-2
T-5mm, 940mm INFRARED EMITTING DIODE
|
Lumex, Inc.
LUMEX INC.
|
| ASDL-4770-C22 ASDL-4770-C41 |
1 ELEMENT, INFRARED LED, 940 nm
High Performance Side look AlGaAs/GaAs Infrared (940nm) Lamp
|
AVAGO TECHNOLOGIES LIMITED
http://
|
| TLN102 |
TOSHIBA INFRARED LED GaAs INFRARED EMITTER
|
TOSHIBA[Toshiba Semiconductor]
|
| TLN11007 TLN110F |
INFRARED LED GAAS INFRARED EMITTER
|
Toshiba Semiconductor
|
| TLN208 |
LED LAMP GaAlAs INFRARED EMITTER
INFRARED LIGHT - EMISSION DIODE FOR STILL CAMERA LIGHT SOURCE FOR AUTO FOCUS
|
Toshiba Semiconductor
Toshiba Corporation
|
| Q62703-Q1090 SFH483E7800 SFH483 |
GaAlAs-IR-Lumineszenzdiode GaAlAs Infrared Emitter 1 ELEMENT, INFRARED LED, 880 nm
GaAlAs-IR-Lumineszenzdiode GaAlAs Infrared Emitter 发动器，红外Lumineszenzdiode GaAlA红外发射
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| L279106 |
Infrared LED Small emission spot LED using current confined chip
|
Hamamatsu Corporation
|
