| PART |
Description |
Maker |
| RJP4006AGE |
Nch IGBT for Strobe Flash
|
Renesas Electronics Corporation
|
| RJP4301APP-15 |
Nch IGBT for Strobe Flash
|
Renesas Electronics Corporation
|
| CY20AAJ-8F |
GTS03024-2s-025 N沟道IGBT的的频闪闪光
Nch IGBT for STROBE FLASHER
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
|
Powerex, Inc.
Powerex Power Semiconductors
Cypress Semiconductor
Mitsubishi Electric Corporation
|
| CY20AAH-8F |
Nch IGBT for Strobe Flasher
|
Renesas Electronics Corporation
|
| CY20AAJ-8H CY20AAJ-8H-T13 |
Nch IGBT for Strobe Flasher
|
Renesas Electronics Corporation
|
| CY25AAJ-8F CY25AAJ-8F-T13 |
Nch IGBT for Strobe Flasher
|
Renesas Electronics Corporation
|
| GT5G134 |
IGBT for strobe flash
|
TOSHIBA
|
| GT20G102 |
N CHANNEL IGBT (STROBE FLASH APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| GT15G101 |
N CHANNEL IGBT (STROBE FLASH APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| GT8G134 |
Silicon N Channel IGBT Strobe Flash Applications
|
Toshiba Semiconductor
|
| CY25BAH-8F CY25BAH-8F-T13 |
D-Subminiature Connector; Gender:Female; Number of Contacts:80; Contact Termination:IDC; Body Material:Steel; Contact Plating:Nickel; Leaded Process Compatible:No; Mounting Type:PC Board; Peak Reflow Compatible (260 C):No
NCH IGBT FOR STROBE FLASHER
Transistors>IGBT>for Stlobe use
|
Renesas Electronics Corporation.
RENESAS[Renesas Electronics Corporation]
|
| GT25G102SM |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS
|
TOSHIBA
|
