| PART |
Description |
Maker |
| HYMP112S64M8-C4 HYMP564S646-E3 HYMP532S64P6-E3 |
200pin Unbuffered DDR2 SDRAM SO-DIMMs based on 512 Mb 1st ver. 128M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200
200pin Unbuffered DDR2 SDRAM SO-DIMMs based on 512 Mb 1st ver. 64M X 64 DDR DRAM MODULE, 0.6 ns, ZMA200
|
Hynix Semiconductor, Inc.
HYNIX SEMICONDUCTOR INC
|
| HMP125S6EFR8C-C4 HMP125S6EFR8C-S5 HMP125S6EFR8C-S6 |
256M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200
256M X 64 DDR DRAM MODULE, 0.4 ns, ZMA200 HALOGEN FREE AND ROHS COMPLIANT, SODIMM-200
128M X 64 DDR DRAM MODULE, 0.4 ns, ZMA200 HALOGEN FREE AND ROHS COMPLIANT, SODIMM-200
200pin Unbuffered DDR2 SDRAM SO-DIMMs
|
HYNIX SEMICONDUCTOR INC
Hynix Semiconductor, Inc.
|
| M470L3223BT0 |
32Mx64 200pin DDR SDRAM SODIMM based on 32Mx8 Data Sheet
|
Samsung Electronic
|
| M470L0914BT0 |
8Mx64 200pin DDR SDRAM SODIMM based on 8Mx16 Data Sheet
|
Samsung Electronic
|
| NT256D64SH8B0GM NT256D64SH8B0GM-75B |
200pin Unbuffered DDR SO-DIMM
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| M471B5273DH0 |
204pin Unbuffered SODIMM
|
Samsung
|
| M470L6423CK0 |
512MB DDR SDRAM MODULE (64Mx64 based on DDP 64Mx 8 DDR SDRAM) 200pin SODIMM 64bit Non-ECC/Parity
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| M470L6423EN0-CLB3 M470L6423EN M470L6423EN0-A2 M470 |
512MB Unbuffered SODIMM(based on sTSOP)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| V43648Y04VCTG-75 |
3.3 VOLT 8M x 64 HIGH PERFORMANCE PC133 UNBUFFERED SODIMM
|
Mosel Vitelic, Corp.
Mosel Vitelic Corp
|
| V436664Z24VG-75PC V436664Z24V V436664Z24VG-10PC V4 |
512MB 144-PIN UNBUFFERED SDRAM SODIMM, 64M x 64 3.3 VOLT
|
Mosel Vitelic, Corp.
MOSEL[Mosel Vitelic, Corp]
Mosel Vitelic Corp
|
| M464S0924FTS M464S0924FTS-CL7A M464S1724FTS-C_L7A |
144pin Unbuffered SODIMM based on 128Mb F-die 64-bit Non ECC
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
