| PART |
Description |
Maker |
| TP0610K-E3 |
185 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236 TO-236, 3 PIN
|
Vishay Intertechnology, Inc.
|
| SI2303ADS-T1 SI2303ADS-T1-E3 |
1300 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236 TO-236, 3 PIN
1300 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236 LEAD FREE PACKAGE-3
|
Vishay Intertechnology, Inc.
|
| SI2301ADS-T1 SI2301ADS-T1-E3 |
1750 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236 TO-236, 3 PIN
1750 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236 LEAD FREE PACKAGE-3
|
Vishay Intertechnology, Inc.
|
| TMPF4393 TMPF4093 TMPF3968A |
TRANSISTOR | JFET | N-CHANNEL | 30MA I(DSS) | TO-236
TRANSISTOR | JFET | N-CHANNEL | 8MA I(DSS) | TO-236
TRANSISTOR | JFET | N-CHANNEL | 5MA I(DSS) | TO-236
|
|
| PH3230S PH3230S115 |
N-channel Trenchmos (tm) logic level FET; Package: SOT669 (LFPAK); Container: Tape reel smd 107 A, 30 V, 0.0065 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235AA
N-channel TrenchMOS logic level FET
N-channel TrenchMOS⑩ logic level FET
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| MTB9N25E MTB9N25E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 9.0 AMPERES 250 VOLTS
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| MTB2P50E_D ON2408 MTB2P50E MTB2P50E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount P-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 2.0 AMPERES 500 VOLTS
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| MTP9N25E MTP9N25 MTP9N25E-D |
TMOS POWER FET 9.0 AMPERES 250 VOLTS RDS(on) = 0.45 OHM 9 A, 250 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
| 2SK410 |
RF POWER, FET
From old datasheet system
Silicon N-Channel MOS FET (HF/VHF power amplifier)
|
Hitachi Semiconductor
|
| NP34N055IHE NP34N055HHE NP34N055HHE-AZ |
Nch MOS FET for High-speed switching
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
34 A, 55 V, 0.019 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 MP-3, 3 PIN
|
NEC[NEC]
Cypress Semiconductor, Corp.
|
| RJK0222DNS-00-J5 |
Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
14 A, 25 V, 0.0137 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET HALOGEN AND LEAD FREE, HWSON3046-8, 9 PIN
|
Renesas Electronics Corporation
|
|
