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S29NS-N07 - 256/128/64 Megabit (16/8/4M x 16-bit), CMOS 1.8 Volt-only Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory

S29NS-N07_4849579.PDF Datasheet


 Full text search : 256/128/64 Megabit (16/8/4M x 16-bit), CMOS 1.8 Volt-only Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory


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256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 レm MirrorBit Process Technology 256,128,64,32.0兆伏安只页面模式闪存具有0.23レ米MirrorBit工艺技
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SPANSION[SPANSION]
AM29F200A AM29F200AB-120EC AM29F200AB-120ECB AM29F 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
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AM27C2048 AM27C2048-120DC AM27C2048-120DC5 AM27C20    2 Megabit (128 K x 16-Bit) CMOS EPROM
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AT93C56AU3-10UU-1.8 AT93C56AD3-10DH-1.8 AT93C56AW- Three-wire Serial EEPROM 2K (256 x 8 or 128 x 16) 4K (512 x 8 or 256 x 16)
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意法半导
MICROCHIP[Microchip Technology]
STMICROELECTRONICS[STMicroelectronics]
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2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 2兆位56亩8位)的CMOS 12.0伏,整体擦除闪存
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2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 150 ns, PDIP32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 120 ns, PDSO32
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SRAM; Memory Type:Asynchronous SRAM; Memory Size:1MB; Memory Configuration:64K x 16; Access Time, Tacc:10ns; Package/Case:44-TSOP-II; Operating Temp. Max:70 C; Operating Temp. Min:0 C RoHS Compliant: Yes
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