| PART |
Description |
Maker |
| EPC-1300-1.0-2 |
Photodiode-Chip
|
EPIGAP optoelectronic GmbH
|
| EPC-1300-1.0-0 EPC-13.0-1.0-0 |
Photodiode-Chip
|
EPIGAP optoelectronic GmbH
|
| EPC-880-0.9-1 |
Photodiode-Chip
|
EPIGAP optoelectronic GmbH
|
| EPC-525-0.5 |
Photodiode-Chip
|
EPIGAP optoelectronic GmbH
|
| EPC-1300-0.22-4 |
Photodiode-Chip
|
EPIGAP optoelectronic GmbH
|
| EPC-880-0.5 |
Photodiode-Chip
|
EPIGAP optoelectronic GmbH
|
| KIP-M25-1 |
Optical Monitoring Photodiode Chip
|
KODENSHI KOREA CORP.
|
| KIP-M1M-1 KIP-M2M-1 KIP-M3M-1 |
Optical Monitoring Photodiode Chip for KIP-MxM
|
KODENSHI KOREA CORP.
|
| KOM0622033A |
6-CHIP SILICON PHOTODIODE ARRAY LOW DARK CURRENT
|
SIEMENS AG
Siemens Semiconductor Group
|
| S8865-256 S8865-256G |
Photodiode array combined with signal processing circuit chip
|
Hamamatsu Corporation
|
| S2592 |
Si photodiode Thermoelectrically cooled photodiode for low-light-level detection in UV to near IR
|
Hamamatsu Photonics
|
| S2592 |
Si photodiode Thermoelectrically cooled photodiode for low-light-level detection in UV to near IR
|
Hamamatsu Corporation
|
