| PART |
Description |
Maker |
| TGF2023-02 |
12 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
| HMC999 |
GaN MMIC 10 WATT POWER AMPLIFIER, 0.01 - 10 GHz
|
Hittite Microwave Corporation
|
| CGH35030F |
30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX S BAND, GaN, N-CHANNEL, RF POWER, HEMFET
|
Cree, Inc.
|
| SLD-1083CZ |
4 Watt Discrete LDMOS FET in Ceramic Package
|
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
ETC
|
| SLD-3091FZ |
30 Watt Discrete LDMOS FET in Ceramic Flanged Package
|
sirenza.com
SIRENZA[SIRENZA MICRODEVICES]
|
| SLD-1026Z |
3 Watt Discrete LDMOS Device Plastic Surface Mount Package
|
sirenza.com
|
| MRF4427 MRF4427R1 MRF4427R2 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
|
Yageo, Corp.
Microsemi Corporation
|
| EW750-100-FB EW750-100-GB EW750-100-JB EW750-100-K |
HIGH POWER EDGEWOUND RESISTORS TUBULAR, 75 WATT to 2000 WATT
|
RCD COMPONENTS INC.
|
| CGH40010 |
10 W, RF Power GaN HEMT
|
CREE[Cree, Inc]
|
| G22001 |
RF POWER GAN TRANSISTOR
|
Polyfet RF Devices
|
| CGH40045 |
45 W, RF Power GaN HEMT
|
CREE[Cree, Inc]
|
| GP2001 |
RF POWER GAN TRANSISTOR
|
Polyfet RF Devices
|
