| PART |
Description |
Maker |
| TGF2023-01-15 |
6 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
| TGF2023-2-01 |
6 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
| 1.5KE100CA 1.5KE110CA 1.5KE120CA 1.5KE130CA 1.5KE1 |
Discrete POWER & Signal Technologies
UHV240-KH/AS
PTSA 0.5/ 9-2.5-Z
Discrete POWER & Signal Technologies 分立功率
1500 Watt Transient Voltage Suppressors(功500瓦的瞬变电压抑制 1500瓦特瞬态电压抑制器（功500瓦的瞬变电压抑制器）
1500 Watt Transient Voltage Suppressors(???500???????靛??????
Glass passivated junction. 1500W Peak Pulse Power capability at 1.0 ms.
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
http://
|
| TGF2023-05 |
25 Watt Discrete Power GaNon SiCHEMT
|
TriQuint Semiconductor
|
| SLD-1083CZ |
4 Watt Discrete LDMOS FET in Ceramic Package
|
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
ETC
|
| SLD-2000 |
12 Watt Discrete LDMOS FET-Bare Die
|
sirenza.com
SIRENZA[SIRENZA MICRODEVICES]
|
| SLD-3091FZ |
30 Watt Discrete LDMOS FET in Ceramic Flanged Package
|
sirenza.com
SIRENZA[SIRENZA MICRODEVICES]
|
| T1G4012036-FL-15 |
120W Peak Power, 24W Average Power, 36V DC ?3.5 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
| EW750-100-FB EW750-100-GB EW750-100-JB EW750-100-K |
HIGH POWER EDGEWOUND RESISTORS TUBULAR, 75 WATT to 2000 WATT
|
RCD COMPONENTS INC.
|
| MJE800T MJE800 MJE702 MJE703 MJE803 MJE700T MJE700 |
From old datasheet system
4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT
|
Motorola, Inc.
ONSEMI[ON Semiconductor]
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| GX3442 |
RF POWER GAN TRANSISTOR
|
Polyfet RF Devices
|
| GP2001 |
RF POWER GAN TRANSISTOR
|
Polyfet RF Devices
|
