| PART |
Description |
Maker |
| KM641003A |
256K x 4 Bit(with OE)High-Speed CMOS Static RAM(256K x 4 OE)高速CMOS 静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KM641003B |
256K x 4 Bit(with OE)High-Speed CMOS Static RAM(256K x 4 OE)高速CMOS 静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| IS61LV25616-12T IS61LV25616-10LQ IS61LV25616-10LQI |
256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY 256K X 16 STANDARD SRAM, 10 ns, PQFP44
256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY 256K × 16高速异步的CMOS静态RAM.3V电源
256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY 256K X 16 STANDARD SRAM, 12 ns, PDSO44
256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY 256K X 16 STANDARD SRAM, 12 ns, PQFP44
256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY 256K X 16 STANDARD SRAM, 15 ns, PBGA48
256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY 256K X 16 STANDARD SRAM, 7 ns, PDSO44
IntelliMAX Advanced Load Management Products; Package: Power 33; No of Pins: 6; Container: Tape & Reel 256K X 16 STANDARD SRAM, 15 ns, PDSO44
IntelliMAX Advanced Load Management Products; Package: Power 33; No of Pins: 6; Container: Tape & Reel
|
INTEGRATED SILICON SOLUTION INC
Aeroflex, Inc.
Integrated Silicon Solution, Inc.
ISSI[Integrated Silicon Solution, Inc]
|
| MB81C84A |
CMOS 256K-BIT HIGH-SPEED SRAM
|
Fujitsu Media Devices
|
| LY61L25616 LY61L25616E LY61L25616GL LY61L25616GV L |
256K X 16 BIT HIGH SPEED CMOS SRAM
|
Lyontek Inc.
|
| AT27BV020-90VI AT27BV020-90VC AT27BV020-90TI AT27B |
High Speed CMOS Logic Octal D-Type Flip-Flops with Data Enable 20-SOIC -55 to 125 256K X 8 OTPROM, 90 ns, PDSO32
High Speed CMOS Logic Octal D-Type Flip-Flops with Data Enable 20-PDIP -55 to 125 256K X 8 OTPROM, 90 ns, PQCC32
High Speed CMOS Logic Octal Positive-Edge-Triggered D-Type Flip-Flops with 3-State Outputs 20-SOIC -55 to 125 256K X 8 OTPROM, 90 ns, PBGA42
High Speed CMOS Logic Octal Positive-Edge-Triggered D-Type Flip-Flops with 3-State Outputs 20-SOIC -55 to 125 256K X 8 OTPROM, 150 ns, PDSO32
2-Megabit 256K x 8 Unregulated Battery-Voltage High Speed OTP EPROM
|
Atmel, Corp.
Atmel Corp.
ATMEL[ATMEL Corporation]
|
| IS61C25616AL IS64C25616AL IS61C25616AL-10KI IS61C2 |
256K x 16 HIGH-SPEED CMOS STATIC RAM
256K X 16 STANDARD SRAM, 12 ns, PDSO44
256K x 16 HIGH-SPEED CMOS STATIC RAM
|
Integrated Silicon Solution, Inc
INTEGRATED SILICON SOLUTION INC
Integrated Silicon Solu...
|
| IS61LV2568L-10T-TR IS61LV2568L-8TL IS61LV2568L08 |
256K X 8 STANDARD SRAM, 8 ns, PDSO44 LEAD FREE, PLASTIC, TSOP2-44
256K x 8 HIGH-SPEED CMOS STATIC RAM
|
天津新技术产业园区管理委员会
Integrated Silicon Solution, Inc.
|
| HY62LF16406D |
High speed, super low power and 4M bit full CMOS SRAM organized as 256K words by 16bits
|
HYNIX
|
| HY62UF16406C |
High speed, super low power and 4M bit full CMOS SRAM organized as 256K words by 16bits
|
HYNIX
|
| K6R1008C1D-TC10 K6R1004V1D-KC08 K6R1016V1D-JC10 K6 |
256K X 4 STANDARD SRAM, 10 ns, PDSO32
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). 256Kx4位（与OE）的高速CMOS静态RAM.0V操作）
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). 256Kx4位（与OE）的高速CMOS静RAM.0V操作）
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
