PART |
Description |
Maker |
2SA1932 |
POWER AMPLIFIER APPLICATIONS DRIBVER STAGE AMPLIFIER APPLICATIONS TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER AND DRIVER STAGE AMPLIFIER APPLICATIONS
|
Toshiba Semiconductor
|
2SA1425 E000527 |
TRANSISTOR (POWER AMPLIFIER/ DRIVER STAGE AMPLIFIER APPLICATIONS) From old datasheet system TRANSISTOR (POWER AMPLIFIER, DRIVER STAGE AMPLIFIER APPLICATIONS) 晶体管(功率放大器,放大器的驱动程序
|
TOSHIBA[Toshiba Semiconductor] Toshiba, Corp.
|
2SC4793 E000997 |
NPN EPITAXIAL TYPE (POWER AMPLIFIER/ DRIVER STAGE AMPLIFIER APPLICATIONS) NPN EPITAXIAL TYPE (POWER AMPLIFIER, DRIVER STAGE AMPLIFIER APPLICATIONS) POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
2SA1930 E000582 |
TRANSISTOR (POWER, DRIVER STAGE AMPLIFIER APPLICATIONS) POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS From old datasheet system
|
Toshiba Semiconductor
|
Q68000-A8787 CGY62 |
GaAs MMIC (Two-stage microwave broadband amplifier IC 50 input / output) 200 MHz - 1800 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER GaAs MMIC (Two-stage microwave broadband amplifier IC 50 input / output) From old datasheet system GaAs MMIC (Two-stage microwave broadband amplifier IC 50 ヘ input / output)
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group] Infineon
|
STEVAL-TDR011V1 |
2-stage RF power amplifier
|
STMicroelectronics
|
2SC2983 |
Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Driver Stage Amplifier Applications
|
TOSHIBA
|
EIM4953-4 |
4.9-5.3 GHz Multi-Stage Power Amplifier
|
Excelics Semiconductor, Inc.
|
EIM5864-4 |
5.8 -6.4 GHz Multi-Stage Power Amplifier
|
Excelics Semiconductor, Inc.
|
EIM5964-4 |
5.9 - 6.4 GHz Multi-Stage Power Amplifier
|
Excelics Semiconductor, Inc.
|
EIM6775-4 |
6.7 - 7.5 GHz Multi-Stage Power Amplifier
|
Excelics Semiconductor, Inc.
|