| PART |
Description |
Maker |
| DGS9-03AS DGS10-03A |
Gallium Arsenide Schottky Rectifier 11 A, 300 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-220AC
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| MGRB1018_D ON1882 MGRB1018 |
Power Manager Gallium Arsenide Power Rectifier
From old datasheet system
GALLIUM ARSENIDE RECTIFIER 10 AMPERES 180 VOLTS
|
MOTOROLA[Motorola, Inc]
ON Semi
|
| MGR1018_D ON1879 MGR1018 |
Power Manager Gallium Arsenide Power Rectifier
From old datasheet system
GALLIUM ARSENIDE RECTIFIER 10 AMPERES 180 VOLTS
|
MOTOROLA[Motorola, Inc]
ON Semi
|
| DGS10-025AS DGS10-022AS |
Gallium Arsenide Schottky Rectifier
|
IXYS[IXYS Corporation]
|
| ML4641-186 ML4962-275 ML4962-138 ML4520-30 ML4520- |
300 V, SILICON, PIN DIODE
40 GHz - 50 GHz, GALLIUM ARSENIDE, GUNN DIODE
KA BAND, 5.5 pF, 30 V, GALLIUM ARSENIDE, ABRUPT VARIABLE CAPACITANCE DIODE
150 V, SILICON, PIN DIODE
27 GHz - 32 GHz, GALLIUM ARSENIDE, GUNN DIODE
|
|
| KPC3023 KPC3020 KPC3021 KPC3022 |
(KPC3020 - KPC3023) Photocoupler(These Photocouplers cosist of a Gallium Arsenide Infrared Emitting)
Photocoupler(These Photocouplers cosist of a Gallium Arsenide Infrared Emitting) 光耦合器（这是一镓砷化物红外线发射光耦cosist
|
Kondenshi Corp
KODENSHI[KODENSHI KOREA CORP.]
KODENSHI, CORP.
|
| ATF-10736 ATF-10736-STR ATF-10736-TR1 ATF-10736-TR |
0.5-12 GHz General Purpose Gallium Arsenide FET
0.5?12 GHz General Purpose Gallium Arsenide FET
0.512 GHz General Purpose Gallium Arsenide FET
|
Agilent(Hewlett-Packard)
Agilent (Hewlett-Packard)
|
| OH10025 |
Gallium Arsenide Devices
|
Panasonic
|
| GN01037B |
Gallium Arsenide Devices
|
Panasonic
|
| 2SK649 |
Gallium Arsenide Devices
|
Panasonic
|
| GN01064B |
Gallium Arsenide Devices
|
Panasonic
|
| 3SK0183 |
Gallium Arsenide Devices
|
Panasonic
|
