PART |
Description |
Maker |
SD172704 SD1727-05 |
HF SSB APPLICATIONS RF & MICROWAVE TRANSISTORS RF POWER BIPOLAR TRANSISTORS HF SSB APPLICATIONS
|
ST Microelectronics Diodes Incorporated
|
SD1728-03 SD1728-01 SD1728-09 SD1728-11 SD1728-16 |
HF SSB APPLICATIONS RF & MICROWAVE TRANSISTORS
|
ST Microelectronics
|
MS1006 |
RF AND MICROWAVE TRANSISTORS HF SSB APPLICATIONS
|
Advanced Power Technolo... ADPOW[Advanced Power Technology]
|
TH430 2889 SD1728 |
From old datasheet system RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS
|
STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
|
SD1407 2794 |
From old datasheet system RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS
|
STMICROELECTRONICS[STMicroelectronics]
|
2SC2879 |
TRANSISTOR (2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS)(LOW SUPPLY VOLTAGE USE)
|
Toshiba Semiconductor
|
2SC2290 E000703 |
2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (LOW SUPPLY VOLTAGE USE) From old datasheet system
|
Toshiba
|
2SC2879 |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (LOW SUPPLY VOLTAGE USE)
|
TOSHIBA
|
2SC2879A |
SILICON NPN EPITAXIAL PLANAR TYPE 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (LOW SUPPLY VOLTAGE USE) 硅型瑞展230MHz的办学线性功率放大器应用(低电源电压使用
|
Toshiba, Corp. Toshiba Semiconductor
|
MS1227 |
HF 2-50 MHz, Class C, Common Emitter; P(out) (W): 20; P(in) (W): 0.65; Gain (dB): 15; Vcc (V): 12.5; Cob (pF): 100; fO (MHz): 0; Case Style: M113 HF BAND, Si, NPN, RF POWER TRANSISTOR RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS
|
Microsemi, Corp. ADPOW
|
MS1007 |
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS HF 2-30 MHz, Class AB, Common Emitter; fO (MHz): 0; P(out) (W): 150; P(in) (W): 6; Gain (dB): 14; Vcc (V): 50; ICQ (A): 100; Case Style: M174 HF BAND, Si, NPN, RF POWER TRANSISTOR
|
Advanced Power Technolo... ADPOW[Advanced Power Technology] Microsemi, Corp.
|