| PART |
Description |
Maker |
| 8485A 8485D Q8486D W8486A R8486A Q8486A R8486D E44 |
8485A Power Sensor, 50 MHz to 26.5 GHz
8485D Diode Power Sensor, 50 MHz to 26.5 GHz
Q8486D Waveguide Power Sensor, 33 GHz to 50 GHz
W8486A Waveguide Power Sensor, 75 GHz to 110 GHz
R8486A Thermocouple Waveguide Power Sensor, 26.5 GHz to 40 GHz
Q8486A Thermocouple Waveguide Power Sensor, 33 GHz to 50 GHz
R8486D Waveguide Power Sensor, 26.5 GHz to 40 GHz
E4412A Wide Dynamic Range Power Sensor, E-Series
E4413A Wide Dynamic Range Power Sensor, E-Series
V8486A V-band Power Sensor, 50 GHz to 75 GHz
8482B High-Power Sensor, 100 kHz to 4.2 GHz, 25W
8487A Power Sensor, 50 MHz to 50 GHz
8482H Power Sensor, 100 kHz to 4.2 GHz, 3 W
8481D Diode Power Sensor, 10 MHz to 18 GHz
|
Agilent (Hewlett-Packard)
|
| UPB1502GR UPB1502GR1 UPB1502GR1-E1 UPB1502GR-E1 |
1.7 GHz/ 2.0 GHz LOW-POWER TWO-MODULUS PRESCALER DIVIDED-BY-64/65, 128/129 1.7千兆 2.0 GHz的低功耗双分频DIVIDED-BY-64/65，一百二十九分之一百二十八
1.7 GHz/ 2.0 GHz Low-Power Two-Modulus Prescaler(1.7GHz 2.0GHz 定标
|
NEC, Corp.
NEC Corp.
|
| SA1070 |
TDMA 8-Watt 1.93 GHz to 1.99 GHz Linear Power Amplifier Module
|
ETC[ETC]
|
| AGR18030EF |
30 W, 1.805 GHz-1.880 GHz, LDMOS RF Power Transistor
|
TriQuint Semiconductor
|
| TPT-18-6036 |
Temperature Compensated Power Amplifier 6 GHz - 18 GHz
|
TELEDYNE[Teledyne Technologies Incorporated]
|
| CPT-18-6028 |
Temperature Compensated Power Amplifier 6 GHz - 18 GHz
|
TELEDYNE[Teledyne Technologies Incorporated]
|
| CPT-18-6036 CPT-18-6025 CPT-18-6026 CPT-18-6035 |
Temperature Compensated Power Amplifier 6 GHz - 18 GHz
|
TELEDYNE[Teledyne Technologies Incorporated]
|
| CPT-8-2015 CPT-8-2014 |
Temperature Compensated Power Amplifier 2 GHz - 8 GHz
|
TELEDYNE[Teledyne Technologies Incorporated]
|
| CPT-8-2024 |
Temperature Compensated Power Amplifier 2 GHz - 8 GHz
|
TELEDYNE[Teledyne Technologies Incorporated]
|
| CPT-8-2027 CPT-8-2025 CPT-8-2026 |
Temperature Compensated Power Amplifier 2 GHz - 8 GHz
|
TELEDYNE[Teledyne Technologies Incorporated]
|
| TIM1414-8-252 |
HIGH POWER P1dB=39.0 dBm at 13.75 GHz to 14.5 GHz
|
Toshiba Semiconductor
|
