| PART |
Description |
Maker |
| SKM195GB063DN SKM195GAL063DN SKM195GAR063DN |
Superfast NPT-IGBT Modules 250 A, 600 V, N-CHANNEL IGBT
|
Semikron International
|
| SKM145GB063DN SKM145GAL063DN |
Superfast NPT-IGBT Modules 200 A, 600 V, N-CHANNEL IGBT
|
Semikron International
|
| SKM200GB063D06 |
Superfast NPT-IGBT Modules
|
Semikron International
|
| SKM200GB063D08 |
Superfast NPT-IGBT Modules
|
Semikron International
|
| HGT1S11N120CNS HGTP11N120CN HGTG11N120CN HGT1S11N1 |
43A, 1200V, NPT Series N-Channel IGBT 43 A, 1200 V, N-CHANNEL IGBT, TO-263AB
Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 3300uF; Voltage: 25V; Case Size: 16x25 mm; Packaging: Bulk 43 A, 1200 V, N-CHANNEL IGBT, TO-220AB
43A/ 1200V/ NPT Series N-Channel IGBT
43A 1200V NPT Series N-Channel IGBT
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| SKW30N60 |
Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode( NPT 技术中的快S-IGBT) 快速的S - IGBT的不扩散核武器条约与软，恢复快反平行快恢复二极管（不扩散技术中的快速第S - IGBT技术）
|
SIEMENS AG
|
| SKA06N60 |
Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode( NPT 技术中的快S-IGBT)
|
SIEMENS AG
|
| APTGF300A120G |
APTGF300A120G NPT IGBT Power Module
|
MICROSEMI[Microsemi Corporation]
|
| APTGF90DH60T3G |
Asymmetrical - Bridge NPT IGBT Power Module
|
Microsemi Corporation
|
| APTGF90H60T3G |
Full - Bridge NPT IGBT Power Module
|
Microsemi Corporation
|
| APTGF50A120T3WG |
Phase leg NPT IGBT Power Module
|
Microsemi Corporation
|
| APTGF530U120D4G |
Single switch NPT IGBT Power Module
|
Microsemi Corporation
|
