| PART |
Description |
Maker |
| BYC10X-600 BYC10X-600127 BYC10X-600.127 BYC10X-600 |
Rectifier diode, hyperfast
Rectifier diode, hyperfast - I<sub>F(AV)</sub> max: 10 A; t<sub>rr</sub>: 19 ns; V<sub>F</sub>: 1.32 V; V<sub>RRM</sub> max: 600 V; Package: SOD113 (TO-220F); Container: Horizontal, Rail Pack
Hyperfast power diode
|
NXP Semiconductors
|
| 30CTH03 |
300V 30A HyperFast Discrete Diode in a TO-220AB package
Hyperfast Rectifier
|
IRF[International Rectifier]
|
| STTH8R03 STTH8R03G STTH8R03G-TR STTH8R03D -STTH8R0 |
8 A, 300 V, SILICON, RECTIFIER DIODE, TO-220AC
300V HYPERFAST RECTIFIER
300V HYPERFAST RECTIFIER
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| BYC15X-600 |
Rectifier diode, hyperfast
Hyperfast power diode
|
NXP Semiconductors N.V.
|
| STTH1506DPI STTH1506D |
15 A, 600 V, SILICON, RECTIFIER DIODE
Tandem 600V HYPERFAST BOOST DIODE
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| BYC10D-600 BYC10D-600-15 |
Hyperfast power diode 600 V, SILICON, RECTIFIER DIODE, TO-220AC
|
NXP Semiconductors N.V.
|
| BYC5D-500 |
Hyperfast power diode 500 V, SILICON, RECTIFIER DIODE, TO-220AC
|
NXP Semiconductors N.V.
|
| BYC15-600 |
Rectifier diode, hyperfast
|
NXP Semiconductors
|
| 30CTH02 30CTH02-1 30CTH02FP 30CTH02S |
200V 20A HyperFast Discrete Diode in a TO-220AB package
300V 20A HyperFast Discrete Diode in a TO-262 package
300V 20A HyperFast Discrete Diode in a TO-220 FullPak package
200V 30A HyperFast Discrete Diode in a D2-Pak package
|
International Rectifier
|
| R720366XXWA R5010210XXWA R9G00822XXWA R9G00622XXWA |
600 A, 3600 V, SILICON, RECTIFIER DIODE
100 A, 200 V, SILICON, RECTIFIER DIODE
2200 A, 800 V, SILICON, RECTIFIER DIODE
2200 A, 600 V, SILICON, RECTIFIER DIODE
2200 A, 400 V, SILICON, RECTIFIER DIODE
450 A, 150 V, SILICON, RECTIFIER DIODE
550 A, 50 V, SILICON, RECTIFIER DIODE
550 A, 150 V, SILICON, RECTIFIER DIODE
2500 A, 1300 V, SILICON, RECTIFIER DIODE
300 A, 900 V, SILICON, RECTIFIER DIODE
1800 A, 200 V, SILICON, RECTIFIER DIODE
1200 A, 3100 V, SILICON, RECTIFIER DIODE
2000 A, 2300 V, SILICON, RECTIFIER DIODE
3600 A, 2300 V, SILICON, RECTIFIER DIODE
100 A, 150 V, SILICON, RECTIFIER DIODE
|
POWEREX INC
|
| HGTP12N60A4D HGT1S12N60A4DS HGTG12N60A4D HGTG12N60 |
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 54 A, 600 V, N-CHANNEL IGBT, TO-247
600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 47uF; Voltage: 25V; Case Size: 5x11 mm; Packaging: Bulk
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
|
