| PART |
Description |
Maker |
| 2N6290 2N6473 2N6476 2N6293 2N6110 2N6107 2N6108 2 |
EPITAXIAL-BASE/ SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
SMA FEMALE POWER DIVIDER; NUMBER OF OUTPUT PORTS: 4; FREQUENCY RANGE: 0.5 - 1 GHz; MINIMUM ISOLATION: 20 dB; VSWR: 1.30 MAXIMUM; MAXIMUM INSERTION
EPITAXIAL-BASE SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
|
Boca Semiconductor Corp.
BOCA[Boca Semiconductor Corporation]
|
| BDX14A BDX14AA BDX14 |
PNP SILICON TRANSISTOR, EPITAXIAL BASE 进步党硅晶体管，外延基地
PNP SILICON TRANSISTOR/ EPITAXIAL BASE
|
Seme LAB
TT electronics Semelab, Ltd.
|
| BR24C16AN-10SU-1.8 BR24C01A-10SU-1.811 BR24C16A-10 |
Silcon Monolithic Integrated Circuit
|
Rohm
http://
|
| 2SC2914 |
SILCON NPN TRIPLE DIFFUSED TYPE
|
New Jersey Semi-Conductor Products, Inc.
|
| BD242 BD242B BD242A |
PNP SILICON EPITAXIAL BASE POWER TRANSISTORS
|
MICRO-ELECTRONICS[Micro Electronics]
|
| BDX67 BDX67A BDX67B BDX67C |
NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR 16 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-3
|
TT electronics Semelab, Ltd.
SEME-LAB[Seme LAB]
|
| 2N4901 2N4902 2N4903 |
PNP SILICON TRANSISTORS, EPITAXIAL BASE
|
Comset Semiconductor
|
| 2N6106 2N6291 |
EPITAXIAL-BASE SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
|
Boca Semiconductor Corporation
|
| 2SA814 2SA815 |
SILICON PNP EPITAXIAL BASE MESA TYPE
|
TOSHIBA[Toshiba Semiconductor]
|
