| PART |
Description |
Maker |
| MAX3537UTC |
Broadband Variable-Gain Amplifiers
|
MAXIM - Dallas Semiconductor
|
| RF2302 RF2302PCBA-H RF2302PCBA-L |
BROADBAND LINEAR VARIABLE GAIN AMPLIFIER 宽带线性可变增益放大器
|
RF Micro Devices, Inc.
RFMD[RF Micro Devices]
http://
|
| RA55H4047M RA55H4047M-101 RA55H4047M11 |
RoHS Compliance , 400-470MHz 55W 12.5V, 3 Stage Amp. For MOBILE RADIO
Broadband Frequency Range
|
Mitsubishi Electric Semiconductor
Mitsubishi Electric Sem...
|
| RA60H1317M RA60H1317M-101 RA60H1317M11 |
RoHS Compliance , 135-175MHz 60W 12.5V, 3 Stage Amp. For MOBILE RADIO
Broadband Frequency Range
|
Mitsubishi Electric Semiconductor
Mitsubishi Electric Sem...
|
| Q62702-F1492 BFR182W |
NPN Silicon RF Transistor (For low noise/ high-gain broadband amplifiers at collector currents from 1mA to 20mA)
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| BFR193 Q62702-F1218 |
NPN Silicon RF Transistor (For low noise/ high-gain amplifiers up to 2GHz For linear broadband amplifiers)
NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers)
From old datasheet system
|
SIEMENS[Siemens Semiconductor Group]
|
| BFP193W Q62702-F1577 |
NPN Silicon RF Transistor (For low noise/ high-gain amplifiers up to 2GHz For linear broadband amplifiers)
NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers)
From old datasheet system
|
SIEMENS[Siemens Semiconductor Group]
|
| AZ100EL16VO AZ100EL16VOD AZ100EL16VONB AZ10EL16VOU |
ECL/PECL Oscillator Gain Stage and Buffer with Enable
|
AZM[Arizona Microtek, Inc]
ETC[ETC]
List of Unclassifed Manufacturers
List of Unclassifed Man...
|
| MGF0910A MGF0910A11 |
High-power GaAs FET (small signal gain stage)
|
Mitsubishi Electric Semiconductor
|
| MGF0913A MGF0913A11 |
High-power GaAs FET (small signal gain stage)
|
Mitsubishi Electric Semiconductor
|
